PART |
Description |
Maker |
E28F004BVT80 E28F004BVB80 E28F004BVT60 E28F004BVT1 |
4-MBIT (256K X 16/ 512K X 8)SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY 4-MBIT (256K X 16. 512K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY Dual-Slot, PCMCIA Analog Power Controller Evaluation Kit for the MAX5943A/B/C/D/E 4-MBIT (256K X 16, 512K X 8)SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY 256K X 16 FLASH 5V PROM, PDSO48 4-MBIT (256K X 16, 512K X 8)SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY 256K X 16 FLASH 5V PROM, PDSO56
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Intel Corporation Intel Corp. Intel, Corp.
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CY7C1361C-133AXC CY7C1361C-133BGI CY7C1361C-133AJX |
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM 256K X 36 CACHE SRAM, 8.5 ns, PBGA119 9-Mbit (256K x 36/512K x 18) Flow-Through SRAM 256K X 36 CACHE SRAM, 8.5 ns, PBGA165 9-Mbit (256K x 36/512K x 18) Flow-Through SRAM 9兆位56 × 36/512K × 18)流通过的SRAM 9-Mbit (256K x 36/512K x 18) Flow-Through SRAM 256K X 36 CACHE SRAM, 6.5 ns, PBGA165
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Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
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CY14B104NA-ZSP20XCT CY14B104NA-ZSP20XIT CY14B104LA |
4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 256Kb x 16; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: TSOP 256K X 16 NON-VOLATILE SRAM, 20 ns, PDSO54 4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 512Kb x 8; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: FBGA 4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 256Kb x 16; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: FBGA
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Cypress Semiconductor, Corp. CYPRESS SEMICONDUCTOR CORP
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HY29LV400TT90I HY29LV400BT90I |
4 Mbit (512K x 8/256K x 16) Low Voltage Flash Memory 4兆位(为512k × 8/256K × 16)低压快闪记忆体
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Hynix Semiconductor, Inc.
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CY7C1356DV25-250BZC CY7C1356DV25-250BZI CY7C1356DV |
256K X 36 ZBT SRAM, 3.2 ns, PBGA119 9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL Architecture
|
CYPRESS SEMICONDUCTOR CORP
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CY14B104LA-ZS20XI CY14B104LA-BA45XC CY14B104NA-BA4 |
4 Mbit (512K x 8/256K x 16) nvSRAM
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http:// Cypress Semiconductor
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CY7C1363C-133AXC |
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM 512K X 18 CACHE SRAM, 6.5 ns, PQFP100
|
Cypress Semiconductor, Corp.
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CY7C1361C-117BGI CY7C1361C-117AXI CY7C1361C-117AXC |
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM 256K X 36 CACHE SRAM, 8.5 ns, PBGA119
|
Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
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E28F004BX-B80 E28F004BX-B60 E28F004BX-T120 28F400B |
4-MBIT (256K X 16. 512K X 8) BOOT BLOCK FLASH MEMORY FAMILY 4兆位56 × 16。为512k × 8)启动块闪存系列 OSC 5V SMT PLAS 14X9 CMOS LENS, ROUND, RED; Colour:Red; Diameter, external:29mm RoHS Compliant: Yes Series RR3130 round rocker switches have an ergonomic euro design and panel mounting ACTUATOR, SWITCH, ROUND, MOMENTARY; Approval Bodies:BEAB, VDE, UL, CSA; Diameter, external:29mm; IP rating:65; Operations, mechanical No. of:1000000; Temp, op. max:85(degree C); Temp, op. min:-20(degree C) RoHS Compliant: Yes Evaluation Kit for the MAX5944 Series RR3112 round rocker switches have an ergonomic feel and multiple circuit options 4-MBIT (256K X 16, 512K X 8) BOOT BLOCK FLASH MEMORY FAMILY 4-MBIT (256K X 16/ 512K X 8) BOOT BLOCK FLASH MEMORY FAMILY
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http:// Electronic Theatre Controls, Inc. PROM Intel Corp. Intel Corporation
|
SST39LF010-45-4C-B3HE SST39VF010-45-4C-B3KE SST39L |
512K X 8 FLASH 2.7V PROM, 70 ns, PBGA48 512K X 8 FLASH 2.7V PROM, 70 ns, PDSO32 128K X 8 FLASH 2.7V PROM, 70 ns, PDSO32 64 Mbit (x16) Multi-Purpose Flash Plus 64K X 8 FLASH 3V PROM, 45 ns, PQCC32 64 Mbit (x16) Multi-Purpose Flash Plus 64K X 8 FLASH 3V PROM, 45 ns, PDSO32 64 Mbit (x16) Multi-Purpose Flash Plus 512K X 8 FLASH 3V PROM, 55 ns, PQCC32 64 Mbit (x16) Multi-Purpose Flash Plus 512K X 8 FLASH 3V PROM, 55 ns, PDSO32 64 Mbit (x16) Multi-Purpose Flash Plus 256K X 8 FLASH 3V PROM, 55 ns, PQCC32 64 Mbit (x16) Multi-Purpose Flash Plus 256K X 8 FLASH 3V PROM, 55 ns, PDSO32 64 Mbit (x16) Multi-Purpose Flash Plus 256K X 8 FLASH 3V PROM, 45 ns, PBGA48 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
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SILICON STORAGE TECHNOLOGY INC Silicon Storage Technology, Inc. Microchip Technology, Inc. Microchip Technology Inc. Silicon Storage Technol...
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BBF2805SE BBF2815S BBF2812S BBF2805SK BBF2803SH BB |
3.3V, 20W DC-DC converter 15V, 20W DC-DC converter 12V, 20W DC-DC converter Analog IC 18-Mbit (512K x 36/1M x 18) Pipelined SRAM with NoBL Architecture 9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL Architecture 18-Mbit QDR-II SRAM 2-Word Burst Architecture 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBL Architecture 20W DC-DC Converter(输出功率20WDC-DC转换
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M.S. Kennedy Corp. M.S. Kennedy Corporation
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