| PART |
Description |
Maker |
| 2SJ201 E001264 |
From old datasheet system
HGIH POWER AMPLIFIER APPLICATION
P CHANNEL MOS TYPE (HIGH POWER AMPLIFIER APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| Q68000-A9124 CGY94 |
GaAs MMIC (Power amplifier for GSM or AMPS application Fully integrated 2 stage amplifier Operating voltage range: 2.7 to 6 V)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| HN7G02FU |
Multi Chip Discrete Device Power Management Switch Application, Inverter Circuit Application, Driver Circuit Application and Interface Circuit Application.
|
TOSHIBA
|
| 2SC3181 |
POWER AMPLIFIER APPLICATION
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SC5200 |
POWER AMPLIFIER APPLICATION
|
New Jersey Semi-Conductor Products, Inc.
|
| 2SB688 |
HIGH POWER AMPLIFIER APPLICATION
|
UTC
|
| 2SK3497 |
High Power Amplifier Application
|
Toshiba Semiconductor
|
| 2SC5344SF |
Audio power amplifier application
|
KODENSHI KOREA CORP.
|
| 2SJ20107 2SJ201 |
High-Power Amplifier Application
|
Toshiba Semiconductor
|
| 2SA1981S |
PNP Silicon Transistor (Audio power amplifier application)
|
AUK[AUK corp]
|
| 2SD718 2SD718-15 |
NPN EPITAXIAL SILICON TRANSISTOR
HIGH POWER AMPLIFIER APPLICATION
|
Unisonic Technologies
|
| 2SB1429 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE POWER AMPLIFIER APPLICATION
|
TOSHIBA[Toshiba Semiconductor]
|
