| PART |
Description |
Maker |
| FLL400IK-2 |
High Voltage - High Power GaAs FET
|
Eudyna Devices Inc
|
| FLL21E090IK |
High Voltage - High Power GaAs FET
|
Eudyna Devices Inc
|
| FLC317MG-4 |
HIGH VOLTAGE - HIGH POWER GAAS FET
|
Electronic Theatre Controls, Inc.
ETC
List of Unclassifed Manufacturers
|
| TC1606 |
2W High Linearity and High Efficiency GaAs Power FETs
|
Transcom, Inc.
|
| TC1501 |
1W High Linearity and High Efficiency GaAs Power FETs
|
Transcom, Inc.
|
| TC1404N |
0.5W High Linearity and High Efficiency GaAs Power FETs
|
Transcom, Inc.
|
| CGD1046HI |
1 GHz, 27 dB gain GaAs high output power doubler 40 MHz - 1003 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
|
NXP Semiconductors N.V.
|
| AUIRS2112S |
The AUIRS2112S is a high voltage, high speed power MOSFET and IGBT driver with independent high- and lowside referenced output channels.
|
International Rectifier
|
| BUX33B BUX33A |
HIGH VOLTAGE HIGH SPEED HIGH POWER TRANSISTORS
|
Semelab
|
| RFS1006 PRFS-1006-0007 PRFS-1006-0008 PRFS-1006-00 |
3.4-3.6 GHz Power Amplifier 3400 MHz - 3600 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
3.4-3.6 GHz Power Amplifier 3号至三月六日GHz功率放大
Single-band power amplifiers
The RFS1006 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in a transmit applications in the 3.4-3.6 ...
|
ANADIGICS, Inc.
ANADIGICS[ANADIGICS, Inc]
ANADIGICS[ANADIGICS Inc]
|
| BFN20 Q62702-F1058 |
NPN Silicon High-Voltage Transistor (Suitable for video output stages in TV sets and switching power supplies High breakdown voltage)
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
