PART |
Description |
Maker |
PS50-24S24 PS50-12S05 PS50-12S12 PS50-12S15 PS50-1 |
High Density DC-DC Modules
|
List of Unclassifed Manufacturers
|
NMC-0108-10E NMC-0107-15 NMC-0107-10E NMC-0806-000 |
Cost-optimized, high density IO modules for use in Advantech’s Network Application Platforms
|
Advantech Co., Ltd.
|
SCFS12000 SCFS10000 SCFS2000 SCFS4000 SCFS6000 SCF |
1.5 A, 4000 V, SILICON, RECTIFIER DIODE FAST RECOVERY HIGH VOLTAGE RECTIFIER ASSEMBLY High Voltage,High Density Fast Recovery Rectifier(反向电压4000V,温55℃时平均整流电流1.5A,高压,高密度,快速恢复整流器) High Voltage,High Density Fast Recovery Rectifier(反向电压6000V,温5℃时平均整流电流1.5A,高压,高密度,快速恢复整流器) High Voltage,High Density Fast Recovery Rectifier(反向电压12000V,温5℃时平均整流电流1.5A,高压,高密度,快速恢复整流器) High Voltage,High Density Fast Recovery Rectifier(反向电压2000V,温5℃时平均整流电流1.5A,高压,高密度,快速恢复整流器) High Voltage,High Density Fast Recovery Rectifier(反向电压10000V,温5℃时平均整流电流1.5A,高压,高密度,快速恢复整流器) High Voltage,High Density Fast Recovery Rectifier(????靛?12000V锛?俯搴?5???骞冲??存??垫?1.5A,楂??锛??瀵?害锛?揩???澶??娴??)
|
Semtech Corporation
|
ISPLSI2096VE-100LT128 ISPLSI2096VE-135LT128 ISPLSI |
3.3V In-System Programmable SuperFAST?/a> High Density PLD CRYSTAL 24.0 MHZ 20PF SMD 3.3V In-System Programmable SuperFASTHigh Density PLD 3.3V In-System Programmable SuperFAST High Density PLD 3.3V In-System Programmable SuperFAST⑩ High Density PLD 3.3VIn-SystemProgrammableSuperFASTHighDensityPLD
|
Lattice Semiconductor Corporation LATTICE[Lattice Semiconductor]
|
ISPLSI2032VL ISPLSI2032VL-110LB49 ISPLSI2032VL-110 |
2.5VIn-SystemProgrammableSuperFASTHighDensityPLD 2.5V In-System Programmable SuperFAST⑩ High Density PLD 2.5V In-System Programmable SuperFAST High Density PLD 2.5V In-System Programmable SuperFASTHigh Density PLD EE PLD, 10 ns, PQFP48 2.5V In-System Programmable SuperFASTHigh Density PLD EE PLD, 10 ns, PQFP44 2.5V In-System Programmable SuperFASTHigh Density PLD EE PLD, 7.5 ns, PQFP44 2.5V In-System Programmable SuperFASTHigh Density PLD EE PLD, 5 ns, PQCC44 2.5V In-System Programmable SuperFASTHigh Density PLD EE PLD, 5 ns, PQFP44
|
LATTICE[Lattice Semiconductor] Lattice Semiconductor Corporation Lattice Semiconductor, Corp.
|
SCPHN20 SCPHN26 SCPHN10 SCPHN16 SCPHN30 SCPHN6 |
High Voltage,High Current,High Density Standard Recovery Rectifier(????靛?16000V锛?俯搴?5???骞冲??存??垫?5.5A,楂??锛?ぇ?垫?,楂??搴??????㈠??存??? 5.5 A, 16000 V, SILICON, RECTIFIER DIODE High Voltage,High Current,High Density Standard Recovery Rectifier(反向电压6000V,温5℃时平均整流电流5.5A,高压,大电流,高密度,标准恢复整流 STANDARD RECOVERY HIGH VOLTAGE, HIGH CURRENT RECTIFIER
|
Semtech Corporation
|
STP80N03L-06 4881 |
N-Channel Enhancement Mode "Ultra High Density" Power MOS Transistor(N沟道增强模式高密度功率MOS晶体管) N沟道增强模式“超高密度”功率MOS晶体管(不适用沟道增强模式高密度功率马鞍山晶体管) N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR From old datasheet system N - CHANNEL ENHANCEMENT MODE "ULTRA HIGH DENSITY" POWER MOS TRANSISTOR
|
STMicroelectronics N.V. ST Microelectronics STMICROELECTRONICS[STMicroelectronics] SGS Thomson Microelectronics
|
MDD172-16N1 MDD172 MDD172-08N1 MDD172-12N1 MDD172- |
High Power Diode Modules 大功率二极管模块 High Power Diode Modules 190 A, 1600 V, SILICON, RECTIFIER DIODE High Power Diode Modules 190 A, 800 V, SILICON, RECTIFIER DIODE High Power Diode Modules 190 A, 1800 V, SILICON, RECTIFIER DIODE Thyristor and Rectifiers Modules
|
IXYS, Corp. IXYS Corporation
|
ISPLSI5256VE-125LT100I ISPLSI5256VE-100LF256I ISPL |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 80 MHz, tpd 12 ns. EE PLD, 10 ns, PBGA256 In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns. In-system programmable 3.3V SuperWIDE high density PLD. fmax 165 MHz, tpd 6.0 ns.
|
Lattice Semiconductor, Corp. LATTICE SEMICONDUCTOR CORP
|