| PART |
Description |
Maker |
| NMA5200-A1M |
High Power Broadband Noise Sources 100 Hz to 1000 MHz
|
Micronetics, Inc.
|
| NMA2516-1T |
High Power Broadband Noise Sources 7800 MHz to 8500 MHz
|
Micronetics, Inc.
|
| NMA5110-B1M |
High Power Broadband Noise Sources 300 MHz to 1000 MHz
|
Micronetics, Inc.
|
| NMA5107-B1M |
High Power Broadband Noise Sources 100 Hz to 100 MHz
|
http://
|
| NMA2511-2T |
High Power Broadband Noise Sources 10 MHz to 1500 MHz
|
Micronetics, Inc.
|
| Q62702-F1382 BFP183 |
NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA) NPN硅射频晶体管（对于低噪声，高增益2毫安0毫安的集电极电流宽带放大器）
NPN Silicon RF Transistor (For low noise high-gain broadband amplifiers at collector currents from 2 mA to 30 mA)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon Technologies AG
|
| MAX3524 |
"Low-Noise, High-Linearity Broadband Amplifier"
|
Maxim
|
| BFP182W |
RF-Bipolar - For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA
|
Infineon Technologies AG
|
| Q68000A4667 BFR35A BFR35AR BFR35 Q62702-F500 Q6270 |
NPN SILICON TRANSISTOR FOR LOW-NOISE RF BROADBAND AMPLIFIERS AND HIGH-SPEED SWITCHING APPLICATIONS
|
Siemens Semiconductor G...
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| Q62702-F1086 BFR93A |
NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector current from 2mA to 30mA)
|
SIEMENS[Siemens Semiconductor Group]
|
