| PART |
Description |
Maker |
| E28F002BX-B80 E28F002BX-T60 E28F002BX-T80 E28F002B |
5V or Adjustable, Low-Voltage, Step-Up DC-DC Controller 28F200BX - B 2兆位28K的1656K × 8）启动块闪存系列
ACTUATOR, SWITCH, ROUND, LATCH; Approval Bodies:BEAB, VDE, UL, CSA; Diameter, external:29mm; IP rating:65; Operations, mechanical No. of:100000; Temp, op. max:85(degree C); Temp, op. min:-20(degree C) RoHS Compliant: Yes
28F002BX-B - 2-MBIT (128K x 16. 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY
2-MBIT (128K x 16, 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY
2-MBIT (128K x 16 / 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY
2-MBIT (128K x 16/ 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY
|
http://
Intel, Corp.
PROM
Intel Corp.
Intel Corporation
|
| CY62137V CY62137VLL-55ZI CY62137VLL-70ZE CY62137VL |
2-Mbit (128K x 16) Static RAM 128K X 16 STANDARD SRAM, 70 ns, PDSO44
|
CYPRESS[Cypress Semiconductor]
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| CY62137VNLL-70ZSXA CY62137VNLL-70ZSXE CY62137VNLL- |
2-Mbit (128K x 16) Static RAM 128K X 16 STANDARD SRAM, 70 ns, PDSO44
|
Cypress Semiconductor Corp.
|
| CY14B101K-SP35XIT CY14B101K-SP25XI |
1 Mbit (128K x 8) nvSRAM With Real Time Clock 128K X 8 NON-VOLATILE SRAM, 35 ns, PDSO48
|
Cypress Semiconductor, Corp.
CYPRESS SEMICONDUCTOR CORP
|
| M27C202-80F1 M27C202-70K6 M27C202-120F6 M27C202-90 |
128K X 16 OTPROM, 80 ns, PDSO40
128K X 16 OTPROM, 90 ns, PQCC44
128K X 16 UVPROM, 100 ns, CDIP40
2 MBIT (128KB X16) UV EPROM AND OTP EPROM
|
STMICROELECTRONICS
ST Microelectronics
|
| CY7C1338G |
4-Mbit (128K x 32) Flow-Through Sync SRAM(4-Mb (128K x 32)流通式同步SRAM)
|
Cypress Semiconductor Corp.
|
| A28F200BR-B A28F200BR-T |
2-MBIT (256K x 8) Boot Block Flash Memory(2兆位 (128K x 16) 引导块闪速存储器)
2-MBIT (128K x 16) Boot Block Flash Memory(2兆位 (128K x 16) 引导块闪速存储器)
|
Intel Corp.
|
| CAT64LC20ZS CAT64LC20ZP CAT64LC20J-TE7 CAT64LC20J- |
36-Mbit QDR™-II SRAM 4-Word Burst Architecture
36-Mbit QDR™-II SRAM 2-Word Burst Architecture
9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL™ Architecture
4-Mbit (128K x 36) Pipelined SRAM with NoBL™ Architecture
4-Mbit (128K x 36) Flow-through SRAM with NoBL™ Architecture
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBL™ Architecture
SPI Serial EEPROM SPI串行EEPROM
36-Mbit QDR™-II SRAM 2-Word Burst Architecture SPI串行EEPROM
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM SPI串行EEPROM
256K (32K x 8) Static RAM SPI串行EEPROM
|
Analog Devices, Inc.
Electronic Theatre Controls, Inc.
|
| M68AF127BL55MC6 M68AF127BMC M68AF127B M68AF127BB M |
1Mbit 128K x8, 5V Asynchronous SRAM 1Mbit28K的8V的异步SRAM
AML22 Series, Electronic Control Pushbutton, Square, Standard Bezel, Lighted, 1 LED, DPDT, Momentary Action, Snap in panel mount
1 MBIT (128K X8) 5.0V ASYNCHRONOUS SRAM
|
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| E28F002BL-T150 28F200BL-TB PA28F200BL-T150 E28F200 |
2-MBIT (128K x 16/ 256K x 8)LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY
2-MBIT (128K x 16 / 256K x 8)LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY
2-MBIT (128K x 16, 256K x 8)LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY 256K X 8 FLASH 12V PROM, 150 ns, PDSO40
|
Intel Corporation
Intel Corp.
Intel, Corp.
|
