PART |
Description |
Maker |
2SK3783 |
N-channel Silicon J-FET N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM
|
NEC[NEC]
|
SCH2602 |
350 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device
|
SANYO SEMICONDUCTOR CO LTD Sanyo Semicon Device
|
2SK435 2SK435E |
Silicon N Channel MOS FET Silicon N-Channel Junction FET TRANSISTOR | JFET | N-CHANNEL | 22V V(BR)DSS | 40MA I(DSS) | TO-92
|
Hitachi Semiconductor
|
HAT1093C-EL-E HAT1095C-EL-E HAT1095C HAT1093C |
2000 mA, 12 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET Silicon P Channel MOSFET Power Switching Silicon P Channel MOS FET Power Switching
|
Renesas Electronics Corporation
|
2SK1215 2SK1215D |
Silicon N-Channel MOS FET Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset Silicon N Channel MOS FETs
|
HITACHI[Hitachi Semiconductor]
|
CMLDM7002A |
SURFACE MOUNT PICOmini DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET 280 mA, 60 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
Central Semiconductor, Corp.
|
HAT1024R-EL-E HAT1024R-15 |
3.5 A, 30 V, 0.34 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET 3.95 X 4.90 MM, PLASTIC, FP-8DAV, SOP-8 Silicon P Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics, Corp. Renesas Electronics Corporation
|
SSM5G06FE |
Silicon P-Channel MOS Type / Silicon Epitaxial Schottky Barrier Diode
|
Toshiba Semiconductor
|
ECH8901 |
PNP Epitaxial Planar Silicon Transistor P-Channel Silicon MOSFET
|
Sanyo Semicon Device
|
2SK1575 |
Silicon N-Channel MOS FET From old datasheet system Silicon NPN Triple Diffused
|
Hitachi Semiconductor
|
SSM5G09TU-14 |
Silicon P Channel MOS Type (U-MOS3)/Silicon Epitaxial Schottky Barrier Diode
|
Toshiba Semiconductor
|
CR80-040 CR150-100 CR80-020LEADFREE CENTRALSEMICON |
2.5V to 5.5V, 230µA Dual Rail-to-Rail Voltage Output 10-Bit DAC with Parallel Interface in 24-lead TSSOP 80 A, 400 V, SILICON, RECTIFIER DIODE, DO-5 150 A, 1000 V, SILICON, RECTIFIER DIODE, DO-8 80 A, 200 V, SILICON, RECTIFIER DIODE, DO-5 60 A, 200 V, SILICON, RECTIFIER DIODE, DO-5 60 A, 600 V, SILICON, RECTIFIER DIODE, DO-5 60 A, 800 V, SILICON, RECTIFIER DIODE, DO-5 60 A, 400 V, SILICON, RECTIFIER DIODE, DO-5 60 A, 1200 V, SILICON, RECTIFIER DIODE, DO-5 True Bipolar Input, Dual 12-Bit, 2-Channel, Simultaneous Sampling SAR ADC; Package: TSSOP; No of Pins: 24; Temperature Range: Industrial 80 A, 800 V, SILICON, RECTIFIER DIODE, DO-5
|
Central Semiconductor, Corp. CENTRAL SEMICONDUCTOR CORP
|
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