PART |
Description |
Maker |
EC31QS03L |
SBD TYPE Extremely Low Forward Voltage drop Diode
|
ETC Nihon Inter Electronics Corporation
|
PMV56XN PMV56XN-01 |
uTrenchMOS (tm) extremely low level FET From old datasheet system mTrenchMOS extremely low level FET
|
Philips
|
PMG370XN |
N-channel uTrenchmos (tm) extremely low level FET N-channel mTrenchMOS extremely low level FET From old datasheet system
|
NXP Semiconductors Philips Semiconductors
|
PC367NJ0000F |
Mini-flat Package High CMR, Low Input Current Type Photocoupler
|
Sharp Electrionic Components
|
IPW65R041CFD |
extremely low losses due to very low fom rdson qg and eoss
|
Infineon Technologies AG
|
PM50CSE060 |
FLAT-BASE FLAT-BASE TYPE INSULATED PACKAGE From old datasheet system
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
PC367N1J000F |
Mini-Flat Package High CMR, AC Input, Low Input Current Type Photocoupler
|
Sharp Electrionic Components
|
PC364NJ0000F |
Mini-Flat Package High CMR, AC Input, Low Input Current Type Photocoupler
|
Sharp Electrionic Components
|
STY16NA90 6004 |
N - CHANNEL 900V - 0.5 ohm - 16A - Max247 EXTREMELY LOW GATE CHARGE POWER MOSFET From old datasheet system N - CHANNEL 900V - 0.5 - 16A - Max247 EXTREMELY LOW GATE CHARGE POWER MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
|
HCU65R600T |
Extremely low switching loss
|
SemiHow Co.,Ltd.
|
UR5HC703 |
Extremely Low-Power Keyboard Encoder(???????????????
|
Semtech Corporation
|