| PART |
Description |
Maker |
| RA45H7687M1-101 |
RF MOSFET MODULE 764-870MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO
|
Mitsubishi Electric Semiconductor
|
| RA20H8087M-E01 RA20H8087M-01 RA20H8087M |
806-825/ 851-870MHz 20W 12.5V/ 3 Stage Amp. For MOBILE RADIO
806-825/ 851-870MHz 20W 12.5V 3 Stage Amp. For MOBILE RADIO
806-825/ 851-870MHz 20W 12.5V, 3 Stage Amp. For MOBILE RADIO 806-825 / 851 - 870MHz 202.5V阶段制造。对于移动通信
|
Mitsubishi Electric Sem...
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric, Corp.
|
| RA03M8087M-101 RA03M8087M RA03M8087M06 |
RoHS Compliance , 806-870MHz 3.6W 7.2V, 2 Stage Amp. For PORTABLE RADIO
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| RA20H8087M_06 RA20H8087M RA20H8087M-101 RA20H8087M |
RoHS Compliance, 806-870MHz 20W 12.5V, 3 Stage Amp. For MOBILE RADIO
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Sem...
|
| RA45H4045MR RA45H4045MR-101 |
400-450MHZ 45W 12.5V, 3 STAGE AMP. FOR MOBILE RADIO
|
http://
Mitsubishi Electric Semiconductor
|
| RA45H4045MR10 |
400-450MHz 45W 12.5V, 3 Stage Amp. For MOBILE RADIO
|
Mitsubishi Electric Semiconductor
|
| RA45H8994M1-101 RA45H8994M1 |
RoHS Compliance, 896-941MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| RA45H4452M_06 RA45H4452M RA45H4452M-101 RA45H4452M |
RoHS Compliance , 440-520MHz 45W 12.5V, 3 Stage Amp. For MOBILE RADIO
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| D8740200GTH |
GaAs Power Doubler, 40 - 870MHz, 20.5dB min. Gain @ 870MHz, 440mA max. @ 24VDC
|
http://
PREMIER DEVICES, INC.
|
| D8740270GT |
GaAs Power Doubler, 40 - 870MHz, 27.0dB min. Gain @ 870MHz, 375mA max. @ 24VDC
|
PREMIER DEVICES, INC.
|
| D8740220GT |
GaAs Power Doubler Hybrid 40 - 870MHz 砷化镓功率倍增混合40 - 870MHz
|
Electronic Theatre Controls, Inc.
ETC
|
| M68769SH |
RF POWER MODULE 470-512 MHz, 12.5V, 45W FM MOBILE RADIO
470-512MHz, 12.5V, 45W, FM MOBILE RADIO
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
