PART |
Description |
Maker |
MTM8N35 MTM8N40 MTH8N40 MTH8N35 |
(MTH8N35 / MTH8N40) Power Field Effect Transistor Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS
|
Motorola Semiconductor MOTOROLA[Motorola, Inc]
|
MTM8N60 MTH8N60 MTH8N55 |
(MTH8N55 / MTH8N60) Power Field Effect Transistor Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS
|
MOTOROLA INC MOTOROLA[Motorola, Inc] Motorola Semiconductor Motorola, Inc.
|
PSMN005-75P PSMN005-75B PSMN005_75P_75B-01 |
N-channel logic level field-effect power transistor in a plastic package using TrenchMOS technology. 75 A, 75 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB From old datasheet system N-channel enhancement mode field-effect transistor
|
NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
|
PTF10009 |
85 Watts, 1.0 GHz GOLDMOS?/a> Field Effect Transistor 85 Watts, 1.0 GHz GOLDMOS Field Effect Transistor 85 Watts, 1.0 GHz GOLDMOS⑩ Field Effect Transistor 85 Watts, 1.0 GHz GOLDMOSField Effect Transistor 85 Watts/ 1.0 GHz GOLDMOS Field Effect Transistor
|
Ericsson Microelectronics ERICSSON[Ericsson]
|
SSM3J02F |
600 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236 Field Effect Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching Applications TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
|
TOSHIBA[Toshiba Semiconductor] Toshiba Corporation
|
TPC6101 TPC6.01 |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) CONNECTOR ACCESSORY Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII) Notebook PC Applications Portable Equipment Applications
|
Toshiba Semiconductor Toshiba Corporation
|
PTF10020 |
2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET 125 Watts/ 860-960 MHz GOLDMOS Field Effect Transistor 125 Watts, 86060 MHz GOLDMOS Field Effect Transistor
|
ERICSSON POWER MODULES AB Ericsson Microelectronics
|
PTF10007 |
35 Watts, 1.0 GHz GOLDMOS Field Effect Transistor 35瓦,1.0 GHz的GOLDMOS场效应晶体管 35 Watts/ 1.0 GHz GOLDMOS Field Effect Transistor 35 Watts 1.0 GHz GOLDMOS Field Effect Transistor
|
ERICSSON[Ericsson] Ericsson Microelectronics
|
PTF10154 |
85 Watts/ 1.93-1.99 GHz GOLDMOS Field Effect Transistor 85 Watts, 1.93-1.99 GHz GOLDMOS Field Effect Transistor 85瓦,1.93-1.99 GHz的GOLDMOS场效应晶体管 85 Watts 1.93-1.99 GHz GOLDMOS Field Effect Transistor
|
ERICSSON[Ericsson]
|
SSM3K12T |
Field Effect Transistor Silicon N Channel MOS Type/Category DC-DC Converter High Speed Switching Applications CategoryTOSHIBA Field Effect Transistor Silicon N Channel MOS Type/Category
|
TOSHIBA[Toshiba Semiconductor]
|
2SK3543 |
Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) Switching Regulator and DC-DC Converter Applications Motor Drive Applications TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSV)
|
Toshiba Semiconductor
|