| PART |
Description |
Maker |
| WED9LC6816V1310BI WED9LC6816V1512BI |
256K X 32 SSRAM/ 4M X 32 SDRAM 256 × 32的SSRAM / 4米32内存
|
Electronic Theatre Controls, Inc.
|
| EDI9LC644V EDI9LC644AV2010BC EDI9LC644AV1512BC EDI |
128Kx32 SSRAM/1Mx32 SDRAM Array(3.3V,128x32同步静态RAMB>1Mx32同步动态RAM阵列)
128Kx32 SSRAM/1Mx32 SDRAM Array(3.3V,128x32同步静态RAMMx32同步动态RAM阵列)
SPECIALTY MEMORY CIRCUIT, PBGA153
|
White Electronic Designs Corporation
|
| EDI9LC644V EDI9LC644V1310BC EDI9LC644V1312BC EDI9L |
128Kx32 SSRAM/1Mx32 SDRAM
|
White Electronic Designs Corporation
|
| S8S3122X16-TCR2 S8S3122X16 S8S3122X16-TCR1 DSS8S31 |
256K x 16 SDRAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| M13S32321A |
256K x 32 Bit x 4 Banks Double Data Rate SDRAM
|
Elite Semiconductor Memory Technology Inc.
|
| MB81P643287 MB81P643287-50 MB81P643287-60 |
8 x 256K x 32 BIT, FCRAMTM CORE BASED DOUBLE DATA RATE SDRAM
|
Fujitsu Component Limited.
Fujitsu Limited
|
| MB81P643287 MB81P643287-50 MB81P643287-60 |
8 x 256K x 32 BIT, FCRAMTM CORE BASED DOUBLE DATA RATE SDRAM
|
FUJITSU[Fujitsu Media Devices Limited]
|
| IS61LPD51218T/D IS61LPD25632T/D IS61SPD25632T/D IS |
256K x 32, 256K x 36, 512K x 18 SYNCHRONOUS PIPELINE, DOUBLE-CYCLE DESELECT STATIC RAM 256K × 3256K × 3612K采样× 18 SYNCHRONOU?管道，双循环取消选择静态RAM
256K X 36 CACHE SRAM, 3.5 ns, PQFP100 TQFP-100
256K x 32/ 256K x 36/ 512K x 18 SYNCHRONOUS PIPELINE/ DOUBLE-CYCLE DESELECT STATIC RAM
|
Integrated Silicon Solution, Inc.
Integrated Silicon Solution Inc
|
| HY57V56820BT HY57V56820BLT-S HY57V56820BT-S HY57V5 |
32Mx8|3.3V|8K|K|SDR SDRAM - 256M
SDRAM|4X8MX8|CMOS|TSOP|54PIN|PLASTIC
4 Banks X 8M X 8Bit Synchronous DRAM
SDRAM - 256Mb
|
Hynix Semiconductor
|
| W982516BH-75 W982516BH-75I W982516BH-75L |
Industrial SDRAM
Low Power SDRAM
4M X 4 BANKS X 16 BIT SDRAM
|
Winbond Electronics
|
| W981216BH W981216 W981216BH-75 W981216BH-75I W9812 |
2M x 4 Banks x 16 Bit SDRAM
Low Power SDRAM
Industrial SDRAM
2M x 4 BANKS x 16 BIT SDRAM
DRAM - Datasheet Reference
|
Winbond Electronics Corp
WINBOND[Winbond]
|
