| PART |
Description |
Maker |
| V53C1256162VAUS7IPC V53C1256162VAUT8IPC V53C125616 |
256Mbit MOBILE SDRAM 2.5 VOLT FBGA PACKAGE 16M X 16 56Mbit移动SDRAM 2.5伏FBGA封装16米x 16
256Mbit MOBILE SDRAM 2.5 VOLT FBGA PACKAGE 16M X 16 256Mbit移动SDRAM 2.5伏FBGA封装16米x 16
256Mbit MOBILE SDRAM 2.5 VOLT FBGA PACKAGE 16M X 16 56Mbit移动SDRAM 2.5伏FBGA封装16x 16
|
Electronic Theatre Controls, Inc.
|
| V54C3256164VBUC V54C3256164VBUT V54C3256164VBLT7 |
16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
LOW POWER 256Mbit SDRAM 3.3 VOLT, 54-BALL SOC BGA 54-PIN TSOPII 16M X 16
LOW POWER 256Mbit SDRAM 3.3 VOLT/ 54-BALL SOC BGA 54-PIN TSOPII 16M X 16
|
MOSEL-VITELIC
Mosel Vitelic, Corp.
Mosel Vitelic Corp
|
| V54C3128804VS V54C3128404VS V54C3128804VT |
128Mbit SDRAM 3.3 VOLT/ TSOP II / SOC PACKAGE 8M X 16/ 16M X 8/ 32M X 4
128Mbit SDRAM 3.3 VOLT, TSOP II / SOC PACKAGE 8M X 16, 16M X 8, 32M X 4 128Mbit SDRAM.3伏，第二的TSOP / SOC的包米1616米x 82 × 4
|
Mosel Vitelic Corp
Mosel Vitelic, Corp.
|
| V53C1256162VALS10 V53C1256162VALS10E V53C1256162VA |
256Mbit MOBILE SDRAM 2.5 VOLT FBGA PACKAGE 16M X 16
256Mbit MOBILE SDRAM 2.5 VOLT FBGA PACKAGE 16M X 16
|
List of Unclassifed Manufacturers
List of Unclassifed Man...
|
| HYB25D256800BTL-5A HYB25D256160BT-5A HYB25D256800B |
256MBit Double Data Rata SDRAM 256Mbit SDRAM的双倍数据拉
|
Infineon Technologies AG
Infineon Technologies A...
|
| HYB25D256400BT HYB25D256800BC-7 HYB25D256400BT-7 H |
256Mbit (64Mx4) DDR200 (2-2-2) ？的256Mbit4Mx4）DDR200-2-2）？
256Mbit (64Mx4) DDR333 (2.5-3-3)
256Mbit (16Mx16) DDR200 (2-2-2)
256Mbit (32Mx8) DDR200 (2-2-2)
256Mbit (32Mx8) DDR266A (2-3-3)
256Mbit (64Mx4) DDR266A (2-3-3)
256Mb (64Mx4) FBGA DDR266A (2-3-3)
256-Mbit Double Data Rate SDRAM/ Die Rev. B
256-Mbit Double Data Rate SDRAM, Die Rev. B
|
http://
Infineon Technologies AG
Infineon Technologies A...
|
| K4S641632H-UC60 K4S641632H-UC70 K4S641632H-UC75 K4 |
64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) 64芯片与内存规格铅54 TSOP-II免费（符合RoHS
D-Subminiature Connector; Gender:Female; No. of Contacts:50; Contact Termination:IDC; D Sub Shell Size:DB50; Body Material:Steel; Contact Plating:Gold Over Nickel RoHS Compliant: Yes 64芯片与内存规格铅54 TSOP-II免费（符合RoHS
64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free 64芯片与内存规格铅54 TSOP-II免费
DELTA CONN 14POS PLUG W/O INSERT
DELTA CONN 14 POS PLUG BAIL LOCK
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| K4H280438F-ULA2 K4H280838F-UCB3 K4H280838F-ULB3 K4 |
128Mb F-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) 128Mb的的F -模与铅DDR SDRAM的规6 TSOP-II免费（符合RoHS
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| K4J55323QG K4J55323QG-BC12 K4J55323QG-BC14 K4J5532 |
256Mbit GDDR3 SDRAM
|
Samsung semiconductor
|
| K4S560432A K4S560432A-TC_L75 K4S560432A-TC_L80 K4S |
256Mbit SDRAM 16M x 4bit x 4 Banks Synchronous DRAM LVTTL 56Mbit SDRAM16米x 4位4银行同步DRAM LVTTL
256Mbit SDRAM 16M x 4bit x 4 Banks Synchronous DRAM LVTTL 56Mbit SDRAM6米x 4位4银行同步DRAM LVTTL
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| GM72V66841 GM72V66841ET GM72V66841ELT-75 GM72V6684 |
2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM
From old datasheet system
IC,SDRAM,4X2MX8,CMOS,TSOP,54PIN,PLASTIC
x8 SDRAM x8 SDRAM内存
|
Hynix Semiconductor Inc.
HYNIX[Hynix Semiconductor]
|
