| PART |
Description |
Maker |
| SRP1040-R36M SRP1040-R56M SRP1040-R47M SRP1040-3R9 |
MAGNETICS - High Current Power Inductors 1 ELEMENT, 0.36 uH, IRON-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS - High Current Power Inductors 1 ELEMENT, 0.56 uH, IRON-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS - High Current Power Inductors 1 ELEMENT, 0.47 uH, IRON-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS - High Current Power Inductors 1 ELEMENT, 3.9 uH, IRON-CORE, GENERAL PURPOSE INDUCTOR, SMD
|
Bourns, Inc.
BOURNS INC
|
| SRP1204-1R8M BOURNSINC-SRP1204-1R8M |
MAGNETICS - High Current Power Inductors 1 ELEMENT, 2 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
|
Bourns, Inc.
|
| CW201212-R33J CW201212-12NJ CW201212-R56J CW201212 |
MAGNETICS-HIGH Q CHIP INDUCTOR 1 ELEMENT, 0.33 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS-HIGH Q CHIP INDUCTOR 1 ELEMENT, 0.012 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS-HIGH Q CHIP INDUCTOR 1 ELEMENT, 0.56 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS-HIGH Q CHIP INDUCTOR 1 ELEMENT, 0.91 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS-HIGH Q CHIP INDUCTOR 1 ELEMENT, 0.0033 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
Inductor; Inductor Type:High Frequency; Inductance:13.3nH; Inductance Tolerance: /- 5 %; Current Rating:600mA; Series:CW201212; Package/Case:0805; Core Material:Alumina Ceramic; Leaded Process Compatible:Yes RoHS Compliant: Yes
|
Bourns, Inc.
BOURNS INC
|
| BCP72 |
PNP Silicon AF Power Transistor (For AF driver and output stages High collector current High current gain)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| BCP69-16 |
High current. Three current gain selections. 1.4 W total power dissipation.
|
TY Semiconductor Co., Ltd
|
| BUX11A |
HIGH CURRENT HIGH POWER HIGH SPEED SILICON N-P-N POWER TRANSISTOR
|
General Electric Solid State
GESS[GE Solid State]
ETC
|
| BFY50 BFY51 BFY52 |
ECONOLINE: RM & RL - Single Output Rail- Industry Standard Pinout- 1kVDC & 2kVDC Isolation- High Efficiency for Low Power Applications- UL94V-0 Package Material- Toroidal Magnetics- Fully Encapsulated- Efficiency to 80%
NPN medium power transistors
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| BUX82 |
HIGH CURRENT HIGH SPEED HIGH POWER SILICON NPN PLANAR TRANSISTOR
|
Seme LAB
|
| HM62V8512B HM62V8512BLFP-7 HM62V8512BLFP-7SL HM62V |
ECONOLINE: RM & RL - Single Output Rail- Industry Standard Pinout- 1kVDC & 2kVDC Isolation- High Efficiency for Low Power Applications- UL94V-0 Package Material- Toroidal Magnetics- Fully Encapsulated- Efficiency to 80%
ECONOLINE: RM & RL - Single Output Rail- Industry Standard Pinout- 1kVDC & 2kVDC Isolation- High Efficiency for Low Power Applications- UL94V-0 Package Material- Toroidal Magnetics- Fully Encapsulated- Efficiency to 80%
Quadruple Bus Buffer Gate With 3-State Outputs 14-PDIP -40 to 85
4 M SRAM (512-kword x 8-bit)
|
Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
|
| BC808-16 BC808-25 BC808-40 Q62702-C1689 BC807 BC80 |
From old datasheet system
SH2 Series, 7086 Group, Two ADC circuits, 6-ch 16-bit MTU2, 3-ch 16-bit MTU2S, Port Output Enable, 2-ch CMT, UBC, 5v IO, 15 mA IO TFP-100B; Vcc= 3.0 to 5.5 volts, Temp= -40 to 85 C; Package: PTQP0100KA-A
PNP Silicon AF Transistors (For general AF applications High collector current High current gain) 500 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR
PNP Silicon AF Transistors (For general AF applications High collector current High current gain) 500 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR
PNP Silicon AF Transistors (For general AF applications High collector current High current gain) 进步党硅晶体管自动对焦（自动对焦对于一般应用高集电极电流的高电流增益）
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
Fairchild Semiconductor, Corp.
|
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