PART |
Description |
Maker |
CAT28F010HI-12 CAT28F010HI90 |
1 Mb Bulk Erase Flash Memory 128K X 8 FLASH 12V PROM, 120 ns, PDSO32 1 Mb Bulk Erase Flash Memory 128K X 8 FLASH 12V PROM, 90 ns, PDSO32
|
ON Semiconductor
|
P28F010 28F010 29066301 |
IC,EEPROM,FLASH,128KX8,CMOS,DIP,32PIN,PLASTIC 5 Volt Bulk Erase Flash Memory From old datasheet system
|
intel
|
AM28F020 AM28F020-120EC AM28F020-120ECB AM28F020-1 |
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt Bulk Erase Flash Memory
|
AMD[Advanced Micro Devices]
|
AM28F512A AM28F512A-90PIB AM28F512A-120EC AM28F512 |
512 Kilobit (64 K x 8-Bit) CMOS 12.0 Volt Bulk Erase Flash Memory with Embedded Algorithms 512 Kilobit (64 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms
|
AMD[Advanced Micro Devices]
|
AM28F020A-90PEB AM28F020A-90PCB AM28F020A-90JEB AM |
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory with Embedded Algorithms 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt Bulk Erase Flash Memory with Embedded Algorithms 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms
|
AMD[Advanced Micro Devices]
|
AM29F040-90PCB AM29F040-90FCB AM29F040-90ECB AM29F |
4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 512K X 8 FLASH 5V PROM, 90 ns, PDSO32 4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 512K X 8 FLASH 5V PROM, 90 ns, PQCC32 4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 512K X 8 FLASH 5V PROM, 90 ns, PDIP32 4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 4兆位24,288 × 8位)的CMOS 5.0伏只,扇区擦除闪 4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 512K X 8 FLASH 5V PROM, 150 ns, PDIP32 4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 512K X 8 FLASH 5V PROM, 55 ns, PDSO32 4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 512K X 8 FLASH 5V PROM, 70 ns, PDSO32
|
Advanced Micro Devices, Inc. ADVANCED MICRO DEVICES INC
|
M5M29GB M5M29GB161BWG M5M29GT161BWG E99002_A M5M29 |
16,777,216-bit (1048,576-word by 16-bit) CMOS 3.3V-only, block erase flash memory From old datasheet system 16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY 16 /777 /216-BIT (1048 /576-WORD BY16-BIT) CMOS 3.3V-ONLY / BLOCK ERASE FLASH MEMORY CMOS 3.3V-only block erase flash memory
|
http:// MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
|
AM29F800B |
Sector Erase Flash Memory
|
AMD
|
M28F201 M28F201-120K1R M28F201-120K1TR M28F201-120 |
2 Mb 256K x 8/ Chip Erase FLASH MEMORY 2 Mb 256K x 8, Chip Erase FLASH MEMORY
|
ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
|
29LV160B |
16 Megabit CMOS 3 Volt-only Sector Erase Flash Memory
|
AMD
|
HY29F040AR-12I HY29F040AR-70I HY29F040AR-15E HY29F |
512K x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory
|
Hynix Semiconductor http://
|
N25Q128A13BF840E N25Q128A23BF840E N25Q128A33BF840E |
16M X 8 FLASH 3V PROM, PDSO16 16M X 8 FLASH 3V PROM, PBGA24 128-Mbit 3 V, multiple I/O, 4-Kbyte subsector erase on boot sectors,XiP enabled, serial flash memory with 108 MHz SPI bus interface
|
Numonyx B.V
|