PART |
Description |
Maker |
2N604006 2N6042G 2N6040G 2N6043G 2N6045G 2N6040 2N |
Plastic Medium−Power Complementary Silicon Transistors Plastic Medium?Power Complementary Silicon Transistors
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http:// ONSEMI[ON Semiconductor]
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BD166 |
Plastic Medium Power Silicon PNP Transistor
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Motorola Inc MOTOROLA[Motorola, Inc]
|
BD165 BD169 |
Plastic Medium Power Silicon NPN Transistor
|
Motorola Inc MOTOROLA[Motorola, Inc]
|
BD139 BD135G BD137 BD137G |
Plastic Medium Power Silicon NPN Transistor
|
Rectron Semiconductor
|
BD159 BD157 BD158 |
Plastic Medium Power NPN Silicon Transistor
|
Motorola Inc MOTOROLA[Motorola, Inc]
|
MJE344 |
Plastic NPN Silicon Medium-Power Transistors
|
New Jersey Semi-Conduct...
|
MJE340G-13 |
Plastic Medium-Power NPN Silicon Transistor
|
ON Semiconductor
|
MJE10B3 MJE1093PNP MJE2090 MJE2103 MJE2100 MJE2102 |
PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS
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New Jersey Semi-Conductor Products, Inc. New Jersey Semi-Conductor P...
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MJE371-D |
Plastic Medium-Power PNP Silicon Transistors
|
ON Semiconductor
|
BDX53B-D |
Plastic Medium-Power Complementary Silicon Transistors
|
ON Semiconductor
|
CSB772P CSB772R CSB772 CSB772E CSB772Q |
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 400 hFE. Complementary CSD882 10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 200 - 400 hFE. Complementary CSD882E 10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSD882R 10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSD882Q 10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSD882P Audio Frequency Power Amplifier and Low Speed Switching
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CDIL[Continental Device India Limited]
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