| PART |
Description |
Maker |
| FLL400IK-2 |
High Voltage - High Power GaAs FET
|
Eudyna Devices Inc
|
| FLL21E090IK |
High Voltage - High Power GaAs FET
|
Eudyna Devices Inc
|
| FLL21E010MK |
High Voltage - High Power GaAs FET
|
Eudyna Devices Inc
|
| TC1606N |
2W High Linearity and High Efficiency GaAs Power FETs
|
Transcom, Inc.
|
| TC1401 |
0.5 W High Linearity and High Efficiency GaAs Power FETs
|
Transcom, Inc.
|
| TC1404N |
0.5W High Linearity and High Efficiency GaAs Power FETs
|
Transcom, Inc.
|
| TC1706 |
3 W High Linearity and High Efficiency GaAs Power FETs
|
Transcom, Inc.
|
| BUL741 |
The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching s
High voltage fast-switching NPN Power Transistor
|
ST Microelectronics, Inc.
STMicroelectronics
|
| IRS26072DSPBF |
The IRS26072D is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels.
|
International Rectifier
|
| 2SC2928 |
HIGH VOLTAGE, HIGH SPEED AND HIGH POWER SWITCHING
|
HITACHI[Hitachi Semiconductor]
|
| FJP3305H1 FJP3305H1TU FJP3305H2 FJP3305H2TU |
High Voltage Fast-Switching NPN Power Transistor
High Voltage Capability
|
Fairchild Semiconductor
|
