| PART |
Description |
Maker |
| FS50SMJ-06 FS50SM-06 |
Nch POWER MOSFET HIGH-SPEED SWITCHING USE
MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE
20 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor
|
Powerex Power Semicondu...
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
Powerex Power Semiconductors
|
| 2SC4942-15 |
NPN SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH-SPEED HIGH-VOLTAGE SWITCHING
|
Renesas Electronics Corporation
|
| IKP20N65H5 |
650V DuoPack IGBT and Diode High speed switching series fifth generation
|
Infineon Technologies A...
|
| 2SK182507 2SK1825 |
N CHANNEL MOS TYPE (HIGH SPEED SWITCHING, ANALOG SWITCH APPLICATIONS)
|
Toshiba Semiconductor
|
| H5N1503P-15 |
Silicon N Channel MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| 2SJ527 2SJ527L 2SJ527S |
Silicon P Channel MOS FET High Speed Power Switching
|
HITACHI[Hitachi Semiconductor]
|
| H7N0307AB-E H7N0307AB05 H7N0307AB |
Silicon N Channel MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJL60S5DPP-E0 RJL60S5DPP-E0T2 |
600V - 20A - SJ MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| H5N1506P-15 |
Silicon N Channel MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| FC807 |
High-Speed Switching Composite Diode Anode Common
|
SANYO[Sanyo Semicon Device]
|
| FC808 |
High-Speed Switching Composite Diode Cathode Common
|
SANYO[Sanyo Semicon Device]
|
