| PART |
Description |
Maker |
| 52004-1210 52004-0510 52004-0310 |
12CKT 1.5MM WIRE TRAP ASY 12 CONTACT(S), FEMALE, STRAIGHT TWO PART BOARD CONNECTOR, WIRE TRAP
5CKT 1.5MM WIRE TRAP ASY 5 CONTACT(S), FEMALE, STRAIGHT TWO PART BOARD CONNECTOR, WIRE TRAP
3CKT 1.5MM WIRE TRAP ASY 3 CONTACT(S), FEMALE, STRAIGHT TWO PART BOARD CONNECTOR, WIRE TRAP
|
Molex, Inc.
|
| AS3833-ZSOT AS3833-ZTQT |
6 channel high-precision LED cont rol ler for 3D-LCD backl ight with integrated step-up cont rol ler
|
ams AG
|
| IRFM150 2N7224 |
N-Channel Power MOSFET(Vdss:100V,Id(cont):34A,Rds(on):0.070惟)(N娌?????MOS?烘?搴??(Vdss:100V,Id(cont):34A,Rds(on):0.070惟))
N-Channel Power MOSFET(Vdss:100V,Id(cont):34A,Rds(on):0.070Ω)(N沟道功率MOS场效应管(Vdss:100V,Id(cont):34A,Rds(on):0.070Ω)) N沟道功率MOSFET（减振钢板基本：100V的，身份证（续）4A条的Rds（on）：0.070Ω）（不适用马鞍山沟道功率场效应管（减振钢板基本00V的，身份证（续）4A条的Rds（on.070Ω））
|
SEMELAB LTD
Electronic Theatre Controls, Inc.
TE Connectivity, Ltd.
Semelab(Magnatec)
SEME-LAB[Seme LAB]
|
| ENE201D-05A EN201D-20A EN201D-14A EN201D-05A EN201 |
Z-TRAP ENE(Nominal varistor voltage 200 to 470V 的Z -陷阱迅杰（标称压敏电0070V
OSCILLATORS 100PPM -20 70 3.3V 4 14.31818MHZ TS HCMOS 5X7MM 4PAD SMD 的Z -陷阱迅杰（标称压敏电20070V
Z-TRAP ENE(Nominal varistor voltage 200 to 470V Z -陷阱迅杰（标称压敏电0070V
|
FUJI ELECTRIC HOLDINGS CO., LTD.
FUJI[Fuji Electric]
|
| IRFY430M-T257 |
Publications, Books RoHS Compliant: NA
N-Channel Power MOSFET For HI-REL Application(Vdss:500V,Id(cont):4.5A,Rds(on):1.65Ω)(N沟道功率MOS场效应管,HI-REL应用(Vdss:500V,Id(cont):4.5A,Rds(on):1.65Ω))
N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS
|
TT electronics Semelab Limited
Semelab(Magnatec)
SEME-LAB[Seme LAB]
|
| XT6.5MB XT5.5MB XT6.0MB |
CERAMIC TRAP
|
ECS, Inc.
|
| IRFE9130 |
P-Channel Power MOSFET(Vdss:-100V,Id(cont):-6.1A,Vdgr:-0.345V)(P沟道功率MOS场效应管(Vdss:-100V,Id(cont):-6.1A,Vdgr:-0.345V)) P沟道功率MOSFET（减振钢板基本：- 100V的，身份证（续） 6.1A，Vdgr 0.345V）性（P沟道功率马鞍山场效应管（减振钢板基本 100V的，身份证（续） 6.1AVdgr 0.345V））
|
Seme LAB
|
| SML100A9 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:1000V,Id(cont):9A,Rds(on):1.100Ω)(N沟道增强高电压功率MOS场效应管(Vdss:1000V,Id(cont):9A,Rds(on):1.100Ω))
|
TT electronics Semelab Limited
Semelab(Magnatec)
|
| AS3668 AS3668-BQFT |
4 Channel Breathl ight Cont rol ler
|
austriamicrosystems AG
|
| STK14C88-M |
32K x 8 AUTOSTORE nvSRAM QUANTUM TRAP CMOS NONVOLATILE STATIC RAM
|
Simtek
|
| 0521511010 |
2.00mm (.079") Pitch Wire Trap, Pull-Cover Style, Right Angle, 10 Circuits
|
Molex Electronics Ltd.
|
