PART |
Description |
Maker |
MIE-534H4 534H4 |
GaAlAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE 大功率的GaAIAs的T 1 3 / 4包装红外发光二极 Infrared Emitting Diodes (IRED)
|
Unity Opto Technology Co., Ltd. UOT[Unity Opto Technology]
|
MIE-334H4 334H4 |
GaAlAs T-1 PACKAGE INFRARED EMITTING DIODE 发动器的T 1包红外发光二极管 Infrared Emitting Diodes (IRED)
|
Unity Opto Technology Co., Ltd. UOT[Unity Opto Technology]
|
MIE-514L3 514L3 |
GaAlAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE 发动器的T 1 3 / 4包装红外发光二极 Infrared Emitting Diodes (IRED)
|
Unity Opto Technology Co., Ltd. UOT[Unity Opto Technology]
|
MIE-334A4 334A4 |
Infrared Emitting Diodes (IRED) AlGaAs/GaAs T-1 PACKAGE INFRARED EMITTING DIODE
|
UOT[Unity Opto Technology]
|
MIE-304L3 304L3 |
Infrared Emitting Diodes (IRED) GaAlAs T-1 PACKAGE INFRARED EMITTING DIODE
|
UOT[Unity Opto Technology]
|
QED234 QED233 QED234A4R0 QED233A4R0 |
GaAs Infrared Emitting Diode PLASTIC INFRARED LIGHT EMITTING DIODE
|
FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor Corporation
|
OP290 OP290A OP290B OP290C OP291A OP291B OP291C OP |
4.95 mm, 1 ELEMENT, INFRARED LED, 890 nm Plastic Infrared Emitting Diode
|
OPTEK TECHNOLOGY INC OPTEK Technologies
|
1N6264 |
GAAS INFRARED EMITTING DIODE 1 ELEMENT, INFRARED LED, 940 nm
|
QT[QT Optoelectronics]
|
LED55CB |
GaAs Infrared Emitting Diode; Package: TO-46; No of Pins: 2; Container: Bulk 1 ELEMENT, INFRARED LED, 940 nm
|
Fairchild Semiconductor, Corp.
|
OP296 OP295 OP297 |
GaAlAs Plastic Infrared Emitting Diode(铝砷化镓塑料封装红外发光二极窄入射模式,峰值前向电.0A) GaAlAs Plastic Infrared Emitting Diode(??????濉??灏??绾㈠????浜??绠?绐??灏?ā寮??宄板?????垫悼.0A)
|
Optek Technology
|
GL513F GL514 GL513 |
Emitting Diode TO-18 Type Infrared TO-18 Type Infrared Emitting Diode 8型红外发光二极管
|
Sharp, Corp. SHARP[Sharp Electrionic Components] Sharp Electrionic Compo...
|