PART |
Description |
Maker |
M2V56S20AKT-6 M2V56S20AKT-5 |
256M Synchronous DRAM
|
Mitsubishi Electric Corporation
|
M2V56S20ATP-8 M2V56S20TP M2V56S30ATP-8 M2V56S40ATP |
256M Synchronous DRAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
M2V56S40TP-8 |
256M Synchronous DRAM 256M同步DRAM
|
Mitsubishi Electric, Corp.
|
M2S56D40ATP-75A M2S56D30ATP-10 M2S56D30ATP-10L M2S |
256M Double Data Rate Synchronous DRAM
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
M2S56D20TP M2S56D20TP-10 M2S56D20TP-75 M2S56D30TP- |
256M Double Data Rate Synchronous DRAM From old datasheet system
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
M2S56D20TP-75 M2V56D30TP-75 M2V56D20TP-75 M2S56D30 |
128 x 64 pixel format, LED Backlight available 256M Double Data Rate Synchronous DRAM
|
Mitsubishi Electric Corporation
|
HY5DU56422ALT-K HY5DU56422ALT-J HY5DU56822ALT-J HY |
256M-S DDR SDRAM 64M X 4 DDR DRAM, 0.7 ns, PDSO66 256M-S DDR SDRAM 16M X 16 DDR DRAM, 0.75 ns, PDSO66
|
Hynix Semiconductor Inc. Hynix Semiconductor, Inc.
|
HY5TQ1G431ZNFP-H8 HY5TQ1G431ZNFP-H7 HY5TQ1G431ZNFP |
256M X 4 DDR DRAM, 0.255 ns, PBGA82 FBGA-82 256M X 4 DDR DRAM, 0.225 ns, PBGA82 FBGA-82 64M X 16 DDR DRAM, 0.3 ns, PBGA100 64M X 16 DDR DRAM, 0.255 ns, PBGA100
|
Hynix Semiconductor, Inc. HYNIX SEMICONDUCTOR INC
|
EBJ21EE8BAWA-DG-E |
256M X 72 DDR DRAM MODULE, DMA240
|
ELPIDA MEMORY INC
|
W3EG2128M64ETSR335JD3MG |
256M X 64 DDR DRAM MODULE, 0.7 ns, DMA184
|
MICROSEMI CORP-PMG MICROELECTRONICS
|