| PART |
Description |
Maker |
| GS8324Z72C-200 GS8324Z18B GS8324Z18C-200I GS8324Z7 |
2M x 18, 1M x 36, 512K x 72 36Mb Sync NBT SRAMs 1M X 36 ZBT SRAM, 10 ns, PBGA209
2M x 18, 1M x 36, 512K x 72 36Mb Sync NBT SRAMs 512K X 72 ZBT SRAM, 7.5 ns, PBGA209
2M x 18, 1M x 36, 512K x 72 36Mb Sync NBT SRAMs 2M X 18 ZBT SRAM, 6 ns, PBGA119
2M x 18, 1M x 36, 512K x 72 36Mb Sync NBT SRAMs 1M X 36 ZBT SRAM, 8.5 ns, PBGA209
512K X 72 ZBT SRAM, 6 ns, PBGA209 14 X 22 MM, 1 MM PITCH, BGA-209
2M x 18, 1M x 36, 512K x 72 36Mb Sync NBT SRAMs 512K X 72 ZBT SRAM, 10 ns, PBGA209
|
GSI Technology, Inc.
|
| GS832218B-133 GS832218B-133I GS832218B-150 GS83221 |
64K 3.3 VOLT SERIAL CONFIGURATION PROM 200万1800万36，为512k × 72分配36MB的S /双氰胺同步突发静态存储器
GIGABASE 350 CAT5E PATCH 1 FT, SNAGLESS, WHITE 200万1800万36，为512k × 72分配36MB的S /双氰胺同步突发静态存储器
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 200万18100万36，为512k × 72分配36MB的S /双氰胺同步突发静态存储器
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 200万1800万36，为512k × 72分配36MB的S /双氰胺同步突发静态存储器
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 200万1800万36，为512k × 72分配36MBS /双氰胺同步突发静态存储器
DIODE, ZENER, 4.3V, 0.5W, 5%, -65-175C, DO-35
(GS832218 / GS832236 / GS832272) S/DCD Sync Burst SRAMs
|
ETC
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
List of Unclassifed Man...
|
| GS8320Z36T-166V GS8320Z36T-133V GS8320Z36T-166VT G |
36Mb Pipelined and Flow Through Synchronous NBT SRAMs 1M X 36 ZBT SRAM, 7 ns, PQFP100
36Mb Pipelined and Flow Through Synchronous NBT SRAMs 1M X 36 ZBT SRAM, 8.5 ns, PQFP100
1M X 36 ZBT SRAM, 7 ns, PQFP100 TQFP-100
1M X 36 ZBT SRAM, 7 ns, PQFP100 ROHS COMPLIANT, TQFP-100
36Mb Pipelined and Flow Through Synchronous NBT SRAMs 1M X 36 ZBT SRAM, 6.5 ns, PQFP100
36Mb Pipelined and Flow Through Synchronous NBT SRAMs 1M X 36 ZBT SRAM, 5.5 ns, PQFP100
36Mb Pipelined and Flow Through Synchronous NBT SRAMs 1M X 36 ZBT SRAM, 6 ns, PQFP100
36Mb Pipelined and Flow Through Synchronous NBT SRAMs 2M X 18 ZBT SRAM, 7 ns, PQFP100
36Mb Pipelined and Flow Through Synchronous NBT SRAMs 2M X 18 ZBT SRAM, 8.5 ns, PQFP100
36Mb Pipelined and Flow Through Synchronous NBT SRAMs 2M X 18 ZBT SRAM, 7.5 ns, PQFP100
|
GSI Technology, Inc.
Electronic Theatre Controls, Inc.
|
| GS832118 |
36Mb Burst SRAMs
|
GSI Technology
|
| GS8342D08E-250 GS8342D08E-250I GS8342D08E-333 GS83 |
36Mb SigmaQuad-II Burst of 4 SRAM
|
GSI[GSI Technology]
|
| GS832118E-150I GS832118E-200 GS832118E GS832118E-1 |
2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
|
GSI[GSI Technology]
|
| MT54W4MH9B-4 MT54W4MH9B-5 MT54W4MH9B-6 MT54W4MH9B- |
36Mb QDR?II SRAM 2-WORD BURST
|
Micron Technology
http://
|
| GS8342T08GE-167I GS8342T08GE-200 GS8342T08GE-333I |
36Mb SigmaCIO DDR-II Burst of 2 SRAM
|
GSI[GSI Technology]
|
| GS8322Z18E-150IT GS8322Z36B-150IT GS8322Z36E-150IT |
36Mb Pipelined and Flow Through Synchronous NBT SRAM
|
GSI Technology
|
| GS8321Z18E-150I GS8321Z18E-166I GS8321Z18E-225 GS8 |
36Mb Pipelined and Flow Through Synchronous NBT SRAMs
|
GSI[GSI Technology]
|
| GS8322Z18B-166IV GS8322Z18B-166V GS8322Z18B-133IV |
36Mb Pipelined and Flow Through Synchronous NBT SRAM
|
GSI[GSI Technology]
|
| GS8322ZV18B-250 GS8322ZV18E-150I GS8322ZV18GB-150 |
36Mb Pipelined and Flow Through Synchronous NBT SRAM
|
GSI[GSI Technology]
|
|
