| PART |
Description |
Maker |
| D4SB10 D4SB20 D4SB40 |
Maximum Ratings & Thermal Characteristics Ratings at 25ambient temperature unless otherwise specified.
|
乐山无线电股份有限公
|
| 0E2300K0 0E2350H0 0E3350H0 E21-E36 E23-50H 0E2100K |
MINIATURE Switch E21-E36 Series
Not recommended for new designs Please review our D4 series
8 Contact Ratings DC ratings optional
|
Cherry Semiconductor Corporation
Cherry Semiconductor Corpor...
Cherry Semiconductor Co...
|
| 121NQ045 121NQ050 121NQ 121NQ035 121NQ040 121NQ045 |
45V 120A Schottky DISCR. (R) Diode in a D-67 HALF-Pak package
45V 120A Schottky Discrete Diode in a D-67 HALF-Pak package
40V 120A Schottky Discrete Diode in a D-67 HALF-Pak package
35V 120A Schottky Discrete Diode in a D-67 HALF-Pak package
SCHOTTKY RECTIFIER
|
IRF[International Rectifier]
|
| STB180N55F3 STP180N55F3 |
N-channel 55V - 3.2mヘ - 120A - D2PAK/TO-220 STripFET⑩ Power MOSFET
N-channel 55V - 3.2mΩ - 120A - D2PAK/TO-220 STripFET Power MOSFET
N-channel 55V - 3.2mΩ - 120A - D2PAK/TO-220 STripFET?/a> Power MOSFET
N-channel 55V - 3.2m楼? - 120A - D2PAK/TO-220 STripFET垄芒 Power MOSFET
|
STMicroelectronics
|
| IRL1404PBF |
HEXFET? Power MOSFET ( VDSS = 40V , RDS(on) = 4.0mΩ , ID = 160A )
HEXFET㈢ Power MOSFET ( VDSS = 40V , RDS(on) = 4.0mヘ , ID = 160A )
|
International Rectifier
|
| IRF1405ZL-7PPBF IRF1405ZS-7PPBF |
HEXFET? Power MOSFET ( VDSS = 55V , RDS(on) = 4.9mΩ , ID = 120A )
HEXFET㈢ Power MOSFET ( VDSS = 55V , RDS(on) = 4.9mヘ , ID = 120A )
|
International Rectifier
|
| GBL201 GBL2005 GBL202 GBL204 GBL206 GBL208 GBL210 |
Maximum Ratings & Thermal Characteristics Ratings at 25?ambient temperature unless otherwise specified.
Maximum Ratings & Thermal Characteristics Ratings at 25∩ ambient temperature unless otherwise specified.
Maximum Ratings & Thermal Characteristics Ratings at 25 ambient temperature unless otherwise specified.
|
Leshan Radio Company
|
| IDT54FCT162374ATPFB IDT54FCT162374TPAB IDT54FCT162 |
FAST CMOS 16-BIT REGISTER (3-STATE)
Variable Capacitance Diode for Digital audio; Ratings VR (V): 10; Characteristics n: 2.40 to 3.05; Characteristics rs (ohm) max: 1.8; Characteristics C (pF) max: C1 = 2.60 to 2.90 C3 = 0.97 to 1.08; Characteristics CVR/CVR: 1/3; Cl: -; Package: MP6
Variable Capacitance Diode for VCO; Ratings VR (V): 15; Characteristics n: 2.35 to 2.55; Characteristics rs (ohm) max: 0.6; Characteristics C (pF) max: C1=6.62 to 7.02 C4=2.60 to 2.95; Characteristics CVR/CVR: 1/4; Cl: -; Package: MP6
Variable Capacitance Diode for VCO; Ratings VR (V): 15; Characteristics n: 2.10 to 2.40; Characteristics rs (ohm) max: 0.75; Characteristics C (pF) max: C0.5 = 7.38 to 7.92 C2.5 = 3.26 to3.58; Characteristics CVR/CVR: 0.5/2.5; Cl: -; Package: MP6
Variable Capacitance Diode for VCO; Ratings VR (V): 10; Characteristics n: 1.680 to 1.750; Characteristics rs (ohm) max: 1.2; Characteristics C (pF) max: C1 = 21.50 to 24.00 C2 = 12.50 to 14.50; Characteristics CVR/CVR: 1/2; Cl: 17; Package: SFP
Variable Capacitance Diode for VCO; Ratings VR (V): 15; Characteristics n: 2.43 to 2.57; Characteristics rs (ohm) max: 0.75; Characteristics C (pF) max: C0.5 = 7.30 to 7.70 C2.5 = 2.90 to 3.18; Characteristics CVR/CVR: 0.5/2.5; Cl: -; Package: MP6
Variable Capacitance Diode for VCO; Ratings VR (V): 10; Characteristics n: 2.30 to 2.46; Characteristics rs (ohm) max: 0.4; Characteristics C (pF) max: C0.5 = 18.5 to 20.0 C2.5 = 7.3 to 8.6; Characteristics CVR/CVR: 0.5/2.5; Cl: 7.95; Package: SFP
Variable Capacitance Diode for Digital audio; Ratings VR (V): 10; Characteristics n: 2.28 to 2.90; Characteristics rs (ohm) max: 1.1; Characteristics C (pF) max: C1 = 2.90 to 3.30 C3 = 1.12 to 1.30; Characteristics CVR/CVR: 1/3; Cl: -; Package: MP6
Variable Capacitance Diode for VCO; Ratings VR (V): 10; Characteristics n: 2.02 to 2.26; Characteristics rs (ohm) max: 0.4; Characteristics C (pF) max: C0.5 = 18.5 to 20.0 C2.5 = 8.55 to 9.45; Characteristics CVR/CVR: 0.5/2.5; Cl: -; Package: MP6
Variable Capacitance Diode for VCO; Ratings VR (V): 10; Characteristics n: 2.62 min; Characteristics rs (ohm) max: 0.4; Characteristics C (pF) max: C1 = 14.6 to 15.8 C4 = 5.20 to 5.80; Characteristics CVR/CVR: 1/4; Cl: 5.85; Package: EFP
Variable Capacitance Diode for VCO; Ratings VR (V): 15; Characteristics n: 3.0 min; Characteristics rs (ohm) max: 2; Characteristics C (pF) max: C1 = 41.6 to 49.9 C4 = 10.1 to 14.8; Characteristics CVR/CVR: 1/4; Cl: 12.45; Package: SFP
Variable Capacitance Diode for VCO; Ratings VR (V): 15; Characteristics n: 1.73 to 2.10; Characteristics rs (ohm) max: 0.7; Characteristics C (pF) max: C1 = 2.35 to 2.70 C3 = 1.22 to 1.42; Characteristics CVR/CVR: 1/3; Cl: -; Package: MP6
|
Integrated Device Technology, Inc.
|
| STV160NF03LA STV160NF03LAT4 |
N-CHANNEL 30V 0.0021 OHM 160A POWERSO-10 STRIPFET POWER MOSFET
N-CHANNEL 30V 0.0021 OHM 160A POWERSO-10 STRIPFET POWER MOSFET
N-CHANNEL 30V - 0.0021OHM - 160A PowerSO-10 STripFET TM POWER MOSFET
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| STB160NF3LL 8735 STB160NF3LLT4 |
160 A, 30 V, 0.004 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
N-CHANNEL 30V - 0.0026 OHM - 160A D2PAK STRIPFET II POWER MOSFET
From old datasheet system
N-CHANNEL 30V - 0.0026 ohm - 160A D2PAK STripFET⑩ II POWER MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
|
| STB300NH02L STB300NH02L0709 STP300NH02L |
N-channel 24V - 120A - TO-220 / D2PAK STripFET Power MOSFET
N-channel 24V - 120A - TO-220 / D2PAK STripFET⑩ Power MOSFET
|
STMicroelectronics
|
| PQ160QH04N |
SBD MODULE 160A/40V
|
NIEC[Nihon Inter Electronics Corporation]
|
