| PART |
Description |
Maker |
| TIM1414-7-252 |
HIGH POWER P1dB=38.0 dBm at 13.75 GHz to 14.5 GHz
|
Toshiba Semiconductor
|
| ES0309-100 |
High Power Switch 0.1 GHz to 1 GHz
|
Micronetics, Inc.
|
| ES0314-20 |
High Power Switch 2 GHz to 18 GHz
|
Micronetics, Inc.
|
| ES0189 |
High Power Switch 2.4 GHz to 2.5 GHz
|
Micronetics, Inc.
|
| EL0051 |
High Power Limiters 0.5 GHz to 2 GHz
|
Micronetics, Inc.
|
| EL0096 |
High Power Limiters 12 GHz to 18 GHz
|
Micronetics, Inc.
|
| SW-106PIN SW-276PIN SW-106SW-276 |
High Power GaAs SPDT Switch DC - 3 GHz
SX Series Subminiature Basic Switch, Single Pole Double Throw (SPDT), 250 Vac, 3 A, Pin Plunger Actuator, Solder Termination
High Power GaAs SPDT Switch DC3 GHz
Schottky Barrier Diodes
|
Tyco Electronics
|
| LD7202W LD7202 LD7202A LD7202B LD7202L |
14 GHz, 600 W CW, PPM FOCUSING, HIGH POWER GAIN 14千兆赫，600 W连续，分之为重点，高功率增益
14 GHz / 600 W CW / PPM FOCUSING / HIGH POWER GAIN
|
NEC Corp.
NEC, Corp.
NEC[NEC]
|
| CGD1046HI |
1 GHz, 27 dB gain GaAs high output power doubler 40 MHz - 1003 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
|
NXP Semiconductors N.V.
|
| SST12LP19E-NR |
2.4 GHz High-Gain, High-Efficiency Power Amplifier
|
Microchip Technology
|
| SST12LP07-QVCE-K SST12LP07 SST12LP07-QVCE |
2.4 GHz High-Power, High-Gain Power Amplifier
|
SST[Silicon Storage Technology, Inc]
|
