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2N4444 - SCR, V(DRM) = 600V TO 699.9V

2N4444_4863598.PDF Datasheet

 
Part No. 2N4444
Description SCR, V(DRM) = 600V TO 699.9V

File Size 111.80K  /  1 Page  

Maker

New Jersey Semi-Conductor Products, Inc.



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(CHINA HK & SZ)
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Part: 2N4444
Maker: N/A
Pack: N/A
Stock: 60
Unit price for :
    50: $1.83
  100: $1.74
1000: $1.64

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 Full text search : SCR, V(DRM) = 600V TO 699.9V
 Product Description search : SCR, V(DRM) = 600V TO 699.9V


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BD825-16 BD827-10 BD827-6 BD829-6 SCR Thyristor; SCR Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:400V; On-State RMS Current, IT(rms):12A; Peak Non Repetitive Surge Current, Itsm:120A; Gate Trigger Current Max, Igt:20mA
SCR Thyristor; SCR Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:400V; On-State RMS Current, IT(rms):65A; Peak Non Repetitive Surge Current, Itsm:950A; Gate Trigger Current Max, Igt:50uA
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TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 2A I(C) | TO-202 晶体管|晶体管|叩| 60V的五(巴西)总裁|甲一(c)|202
Analog Devices, Inc.
HIROSE ELECTRIC Co., Ltd.
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Triac; Thyristor Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):8A; Gate Trigger Current (QI), Igt:25mA; Current, It av:8A; Gate Trigger Current Max, Igt:25mA RoHS Compliant: Yes
Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):8A; Gate Trigger Current (QI), Igt:35mA; Current, It av:8A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes
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SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
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