| PART |
Description |
Maker |
| SFD251H |
Crossed-Field Amplifier
|
Communications & Power Industries, Inc.
|
| R2486-04 R2486 R2486-01 R2486-02 R2486-03 |
POSITION-SENSITIVE PHOTOMULTIPLIER TUBES WITH CROSSED WIRE ANODES 位置灵敏光电倍增管带交叉钢丝阳极
|
Hamamatsu Photonics K.K.
HAMAMATSU[Hamamatsu Corporation]
|
| 2SK285407 2SK2854 |
FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE UHF BAND AMPLIFIER APPLICATION
|
Toshiba Semiconductor
|
| 2SK170 |
Field Effect Transistor Silicon N Channel Junction Type Low Noise Audio Amplifier Applications
|
TOSHIBA
|
| 2SJ108 |
Field Effect Transistor Silicon P Channel Junction Type Low Noise Audio Amplifier Applications
|
TOSHIBA
|
| 2SJ313 |
Field Effect Transistor Silicon P Channel MOS Type Audio Frequency Power Amplifier Application
|
TOSHIBA
|
| 3SK240 |
Field Effect Transistor GaAs N-Channel Dual Gate MES Type TV Tuner, UHF RF Amplifier Applications
|
TOSHIBA
|
| 2SK3320 2SK3320-GR 2SK3320Y |
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
For Low Noise Audio Amplifier Applications
|
Toshiba Semiconductor
|
| 2SK3079 |
FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 900 MHz BAND AMPLIFIER APPLICATIONS (GSM)
|
TOSHIBA
|
| 2SK3078 |
FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 900 MHz BAND AMPLIFIER APPLICATIONS (GSM)
|
TOSHIBA
|
| 3SK223 |
RF AMPLIFIER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD
|
NEC
|
| 2SK3077 |
FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 900 MHz BAND AMPLIFIER APPLICATIONS (GSM)
|
TOSHIBA[Toshiba Semiconductor]
|
