| PART |
Description |
Maker |
| WTN9435 |
Surface Mount P-Channel Enhancement Mode Power MOSF ET
|
Weitron Technology
|
| UPA2702GR UPA2702GR-E2 UPA2702GR-E1 UPA2702TP-E2 U |
SWITCHING N- AND P-CHANNEL POWER MOS FET
NUT, HEX, 2-56 X STD THK, SST 开关N沟道功率MOSFET
Nch enhancement-type MOSFET
SWITCHING N-CHANNEL POWER MOSFET
|
NEC, Corp.
|
| UPA2717GR UPA2717GR-A |
15 A, 30 V, 0.0104 ohm, P-CHANNEL, Si, POWER, MOSFET
SWITCHING N- AND P-CHANNEL POWER MOS FET
SWITCHING P-CHANNEL POWER MOSFET
|
NEC[NEC]
|
| HAT2215R-EL-E HAT2215R-15 |
3.4 A, 80 V, 0.145 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
Silicon N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJM0306JSP-00-J0 RJM0306JSP10 |
Silicon N / P Channel Power MOS FET High Speed Power Switching
3.5 A, 30 V, 4 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET 4.90 X 3.95 MM, SOP-8
|
Renesas Electronics Corporation
|
| RJK0368DPA-00-J0 RJK0368DPA10 |
20 A, 30 V, 0.0224 ohm, N-CHANNEL, Si, POWER, MOSFET LEAD FREE, WPAK-8
Silicon N Channel Power MOS FET Power Switching
Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
| UPA2713GR |
SWITCHING N- AND P-CHANNEL POWER MOS FET
SWITCHING P-CHANNEL POWER MOSFET
|
NEC Corp.
NEC[NEC]
|
| MG75Q1JS40 E002405 |
Silicon N channel IGBT(N沟道绝缘栅双极型晶体 N通道IGBT的（不适用沟道绝缘栅双极型晶体管）
N CHANNEL IGBT (HIGH POWER SWITCHING / CHOPPER APPLICATIONS)
N CHANNEL IGBT (HIGH POWER SWITCHING CHOPPER APPLICATIONS)
From old datasheet system
N CHANNEL IGBT (HIGH POWER SWITCHING, CHOPPER APPLICATIONS)
|
Toshiba, Corp.
TOSHIBA[Toshiba Semiconductor]
|
| HAT1055R HAT1055RJ |
Transistors>Switching/MOSFETs
Silicon P Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK0365DPA RJK0365DPA-00-J0 |
30 A, 30 V, 0.0134 ohm, N-CHANNEL, Si, POWER, MOSFET LEAD FREE, WPAK-8
Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
