PART |
Description |
Maker |
K7A403609A K7A401809A K7A403609B |
256K x 18-Bit Synchronous Pipelined Burst SRAM Data Sheet 128K x 36-Bit Synchronous Pipelined Burst SRAM Data Sheet 128Kx36 & 256Kx18-Bit Synchronous Pipelined Burst SRAM 128Kx36/x32 & 256Kx18 Synchronous SRAM
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
K7N403601M K7N401801M |
128Kx36 & 256Kx18 Pipelined NtRAM-TM
|
SAMSUNG[Samsung semiconductor]
|
KM718V849 KM736V749 |
(KM736V749 / KM718V849) 128Kx36 & 256Kx18 Pipelined NtRAM
|
Samsung Semiconductor
|
KM736V787 |
128Kx36-Bit Synchronous Burst SRAM(128Kx36位同步静RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
K7A203600 K7A203600A K7A203600B-QCI14 |
64K x 36-Bit Synchronous Pipelined Burst SRAM Rev. 2.0 (Dec. 1999) 64Kx36 & 64Kx32-Bit Synchronous Pipelined Burst SRAM 64Kx36-Bit Synchronous Pipelined Burst SRAM
|
Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD.
|
K7N803645A K7N801845A |
256Kx36-Bit Pipelined NtRAMData Sheet 512Kx18-Bit Pipelined NtRAMData Sheet
|
Samsung Electronic
|
CY7C1351 7C1351 CY7C1351-66AC 7C1351-40 7C1351-50 |
128Kx36 Flow-Through SRAM with NoBL TM Architecture From old datasheet system 128Kx36 Flow-Through SRAM with NoBL Architecture
|
CYPRESS[Cypress Semiconductor]
|
MCM63P818 MCM63P736 MCM63P736TQ100 MCM63P736ZP133R |
Circular Connector; Body Material:Aluminum; Series:PT07; No. of Contacts:2; Connector Shell Size:8; Connecting Termination:Solder; Circular Shell Style:Jam Nut Receptacle; Circular Contact Gender:Pin; Insert Arrangement:8-2 128K x 36 and 256K x 18 Bit Pipelined BurstRAM Synchronous Fast Static RAM 256K X 18 CACHE SRAM, 5 ns, PQFP100 128K x 36 and 256K x 18 Bit Pipelined BurstRAM Synchronous Fast Static RAM 128K X 36 CACHE SRAM, 4 ns, PBGA119 128K x 36 and 256K x 18 Bit Pipelined BurstRAM Synchronous Fast Static RAM 128K X 36 CACHE SRAM, 5 ns, PQFP100 Replaced by PTH12000W :
|
MOTOROLA INC NEC, Corp. Motorola Mobility Holdings, Inc. Motorola, Inc.
|
A63P7336E-4.2F A63P7336 A63P7336E A63P7336E-2.6 A6 |
128K X 36 Bit Synchronous High Speed SRAM with Burst Counter and Pipelined Data Output 128K的米36位同步高的Burst计数器和流水线数据输出高速SRAM 128K X 36 Bit Synchronous High Speed SRAM with Burst Counter and Pipelined Data Output 128K的米6位同步高的Burst计数器和流水线数据输出高速SRAM DIODE, ZENER, 12V, 500MW, DO35
|
AMIC Technology, Corp. AMIC Technology Corporation AMICC[AMIC Technology]
|
GS8321ZV36E-250I GS8321ZV36E-225I GS8321ZV36E-133 |
Octal 16-/12-Bit Rail-to-Rail DACs with 10ppm/C Max Reference; Package: 20-TSSOP; Temperature Range: 0°C to 70°C 36Mb Pipelined and Flow Through Synchronous NBT SRAM 1M X 36 ZBT SRAM, 8.5 ns, PBGA165 36Mb Pipelined and Flow Through Synchronous NBT SRAM 1M X 36 ZBT SRAM, 8 ns, PBGA165 36Mb Pipelined and Flow Through Synchronous NBT SRAM 2M X 18 ZBT SRAM, 8.5 ns, PBGA165 36Mb Pipelined and Flow Through Synchronous NBT SRAM 1M X 32 ZBT SRAM, 6.5 ns, PBGA165
|
GSI Technology, Inc.
|
K7N161845M K7N163645M |
512Kx36 & 1Mx18-Bit Pipelined NtRAMTM 512Kx36 512Kx36 & 1Mx18-Bit Pipelined NtRAMTM
|
http:// Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
|
K7P401823B |
128Kx36 & 256Kx18 SRAM
|
Samsung semiconductor
|