| PART |
Description |
Maker |
| IRF7311TR IRF7311TRPBF |
Generation V Technology
20V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
6.6 A, 20 V, 0.029 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA
|
International Rectifier
|
| WNMD2162A WNMD2162A-8TR |
Dual N-Channel, 20V, 4.8A, Power MOSFET
|
TY Semiconductor Co., Ltd
|
| FDME1024NZT |
20V Dual N-Channel Power TrenchMOSFET
|
Fairchild Semiconductor
|
| WNMD2160 WNMD2160-6TR |
Dual N-Channel, 20V, 6.3A, Power MOSFET
|
TY Semiconductor Co., Ltd
|
| FDG6332C FDG6332CNL |
Tantalum Molded Capacitor; Capacitance: 220uF; Voltage: 6.3V; Packaging: Tape & Reel 700 mA, 20 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET
20V N & P-Channel PowerTrench MOSFETs
20V N &P - Channel Power Trench MOSFET
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| ITF87008DQT |
7.0A/ 20V/ 0.023 Ohm/ Dual N-Channel/ 2.5V Specified Power MOSFET
7.0A 20V 0.023 Ohm Dual N-Channel 2.5V Specified Power MOSFET
7.0A, 20V, 0.023 Ohm, Dual N-Channel, 2.5V Specified Power MOSFET
|
INTERSIL[Intersil Corporation]
|
| IRF7101 IRF7101TR |
20V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
|
IRF[International Rectifier]
|
| IRF7601 IRF7601TR |
20V Single N-Channel HEXFET Power MOSFET in a Micro 8 package
Power MOSFET(Vdss=20V, Rds(on)=0.035ohm)
Power MOSFET(Vdss=20V/ Rds(on)=0.035ohm)
N-Channel HEXFET Power MOSFET(N沟道 HEXFET 功率MOS场效应管) N沟道HEXFET功率MOSFET的（不适用沟道的HEXFET功率马鞍山场效应管）
N-Channel HEXFET Power MOSFET(N娌?? HEXFET ???MOS?烘?搴??)
|
International Rectifier, Corp.
|
| IRF7304TR |
Generation V Technology
-20V Dual P-Channel HEXFET Power MOSFET in a SO-8 package
|
International Rectifier
|
| NTQD6968N |
Power MOSFET 7.0A, 20V, Common Drain, Dual N Channel, TSSOP8(7.0A, 20V双功率MOSFET)
|
ON Semiconductor
|
| ITF87008DQT FN4814 |
7.0A, 20V, 0.023 Ohm, Dual N-Channel, 2.5V Specified Power MOSFET
From old datasheet system
|
Intersil
|
