| PART |
Description |
Maker |
| IS67WVE4M16ALL IS66WVE4M16ALL |
1.8V Core Async/Page PSRAM
|
Integrated Silicon Solution, Inc
|
| IS67WVE4M16BLL-70BLA1 IS66WVE4M16BLL-70BLI |
3.0V Core Async/Page PSRAM
|
Integrated Silicon Solution, Inc
|
| MT28C128532W18 |
(MT28C128532W18 / MT28C128564W18) 128Mb Multibank Burst Flash 32Mb ASYNC/PAGE CellularRAM COMBO Memory
|
Micron Technology
|
| EUA6027 EUA6027QIR1 |
128K x 8 ASYNC 5V
32K x 8, 5V, Async
|
德信科技股份有限公司
|
| HM65W8512 |
4 M PSRAM (512-kword ×8-bit)(4 M PSRAM (512k×8) 4个M移动存储芯片12 KWord的8位）个M移动存储芯片（为512k字8位）
|
Hitachi,Ltd.
|
| GS71024GT-10I GS71024GT-12 GS71024GT-15 GS71024GT- |
1.5Mb Async SRAMs
Planar E Core
OSC 5V SMT PLAS 14X9 CMOS
64K x 24 1.5Mb Asynchronous SRAM 64K的24即：1.5MB异步SRAM
|
GSI[GSI Technology]
Electronic Theatre Controls, Inc.
GSI Technology, Inc.
|
| M36D0R6040T0ZAIT M36D0R6040B0ZAI M36D0R6040B0ZAIE |
64 Mbit (4Mb x16, Multiple Bank, Page) Flash Memory and 16 Mbit (1Mb x16) PSRAM, Multi-Chip Package
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| GS78108A |
8Mb Async SRAMs
|
GSI Technology
|
| MT45W2ML16PFA MT45W2MW16PFA MT45W2MV16PFA |
(MT45WxMx16PFA) Async Cellularram Memory
|
Micron Semiconductor
|
| CS19208CBI |
OC-192/48/12/3 DW/FEC/PM and ASYNC Mapper Device
|
Applied Micro Circuits Corporation
|
| CY7C188-25VC CY7C188-15VC CY7C188-35VC CY7C188 CY7 |
Memory : Async SRAMs
32K x 9 Static RAM
|
CYPRESS[Cypress Semiconductor]
|
| M36W0R6050B3 M36W0R6050B3ZAQE M36W0R6050B3ZAQF M36 |
SPECIALTY MEMORY CIRCUIT, PBGA107
64-Mbit (4 Mbits 隆驴16, multiple bank, burst) Flash memory and 16-Mbit (1 Mbit 隆驴16) or 32-Mbit (2 Mbits x16) PSRAM MCP
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package
64-Mbit (4 Mbits 】16, multiple bank, burst) Flash memory and 16-Mbit (1 Mbit 】16) or 32-Mbit (2 Mbits x16) PSRAM MCP
|
Numonyx B.V
|
