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IS61DDP2B41M36AA1A2 - 2Mx18, 1Mx36 36Mb DDR-IIP(Burst 4) CIO SYNCHRONOUS SRAM

IS61DDP2B41M36AA1A2_4814477.PDF Datasheet
 Full text search : 2Mx18, 1Mx36 36Mb DDR-IIP(Burst 4) CIO SYNCHRONOUS SRAM
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PART Description Maker
IS61DDP2B41M36A/A1/A2 IS61DDP2B42M18A IS61DDP2B42M 2Mx18, 1Mx36 36Mb DDR-IIP(Burst 4) CIO SYNCHRONOUS SRAM
 Integrated Silicon Solution, Inc
K7J323682M K7J321882M 1Mx36 & 2Mx18 DDR II SIO b2 SRAM
 Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
K7B321825M K7B323625M K7B323625M-QC6575 Aluminum Snap-In Capacitor; Capacitance: 820uF; Voltage: 250V; Case Size: 22x50 mm; Packaging: Bulk
1Mx36 & 2Mx18 Synchronous SRAM
1Mx36 & 2Mx18 Synchronous SRAM
 SAMSUNG SEMICONDUCTOR CO. LTD.
K7M321825M K7M323625M K7N321801M-QC25 K7N323601M-Q 1Mx36 & 2Mx18 Flow-Through NtRAM 1Mx36
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 Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
K7S3218T4C K7S3236T4C K7S3236T4C-FECI45 K7S3236T4C 1Mx36 & 2Mx18 QDRTM II b4 SRAM
1Mx36 & 2Mx18 QDRTM II b4 SRAM 1Mx36
 SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
K7P323688M 1Mx36 & 2Mx18 SRAM
 Samsung Electronics
K7P323666M K7P321866M 1Mx36 & 2Mx18 SRAM
 SAMSUNG SEMICONDUCTOR CO. LTD.
K7B323625M K7A321800M-QC14 K7B323625M-QC6575 K7A32 1Mx36 & 2Mx18 Synchronous SRAM
 Samsung Electronic
SAMSUNG[Samsung semiconductor]
K7S3236U4C 1Mx36 & 2Mx18 QDR II b4 SRAM
 Samsung semiconductor
K7S3236T4C08 K7S3218T4C 1Mx36 & 2Mx18 QDR II b4 SRAM
 Samsung semiconductor
K7A321830C K7A323630C K7A321830C-PC20 K7A323630C-P 1Mx36 and 2Mx18 Synchronous SRAM 1Mx36Mx18同步SRAM
 SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
 
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