PART |
Description |
Maker |
IXGH12N100U1 IXGH12N100 IXGH12N100AU1 |
Low VCE(sat) IGBT with Diode High Speed IGBT with Diode
|
IXYS[IXYS Corporation]
|
IXSH20N60U1 IXSH20N60AU1 |
Low VCE(sat) IGBT with Diode, High Speed IGBT with Diode
|
IXYS[IXYS Corporation]
|
IXSP10N60B2D1 IXSA10N60B2D1 |
High Speed IGBT with Diode 20 A, 600 V, N-CHANNEL IGBT, TO-220AB
|
IXYS, Corp. IXYS[IXYS Corporation]
|
IXGH25N100AU1 |
High speed IGBT with Diode 50 A, 1000 V, N-CHANNEL IGBT, TO-247AD
|
IXYS, Corp.
|
BUP313D Q67040-A4228-A2 BUP313-D |
From old datasheet system IGBT With Antiparallel Diode (Low forward voltage drop High switching speed Low tail current Latch-up free) IGBT Duopack (IGBT with Antiparallel ...
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group] Infineon
|
IXST30N60B2D1 |
High Speed IGBT with Diode
|
IXYS
|
RJQ6003DPM-00T0 RJP6003DPM |
600V - 20A - IGBT and Diode High Speed Power Switching
|
Renesas Electronics Corporation
|
RJQ6008DPM-00T0 RJQ6008DPM-15 |
600V - 10A - IGBT and Diode High Speed Power Switching
|
Renesas Electronics Corporation
|
IKW40N65F5 IKP40N65F5 PG-TO247-3 |
650V DuoPack IGBT and Diode High speed switching series fifth generation
|
Infineon Technologies AG
|
IKW75N65EH5 IKW75N65EH5-15 |
650V DuoPack IGBT and full-rated diode High speed series fifth generation
|
Infineon Technologies A...
|
MG200Q2YS65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications
|
Toshiba Semiconductor Mitsubishi Electric Semiconductor Toshiba Corporation
|
MG600Q1US65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications
|
TOSHIBA
|