| PART |
Description |
Maker |
| BP40-06G BP40-02G BP40-08G BP40-005G BP40-04G BP40 |
40A HIGH CURRENT SILICON BRIDGE RECTIFIERS
|
Frontier Electronics.
|
| KBPC40P KBPC4000P KBPC4000PW KBPC4001P KBPC4001PW |
40A HIGH CURRENT SINGLE-PHASE BRIDGE RECTIFIER
|
WTE[Won-Top Electronics]
|
| JAN1N5300U JANS1N5314UR-1 1N5283UR-1 1N5284UR-1 1N |
Current Limiter Diode
Single Inverter Gate 5-SOT-23 -40 to 85 1.5 mA, SILICON, CURRENT REGULATOR DIODE, DO-213AB
CURRENT REGULATOR DIODES 0.43 mA, SILICON, CURRENT REGULATOR DIODE, DO-213AB
4-Pin DIP Phototransistor Output Optocoupler 1.4 mA, SILICON, CURRENT REGULATOR DIODE, DO-213AB
CURRENT REGULATOR DIODES 3.6 mA, SILICON, CURRENT REGULATOR DIODE, DO-213AB
CURRENT REGULATOR DIODES 0.27 mA, SILICON, CURRENT REGULATOR DIODE, DO-213AB
CURRENT REGULATOR DIODES 4.3 mA, SILICON, CURRENT REGULATOR DIODE, DO-213AB
CURRENT REGULATOR DIODES 0.33 mA, SILICON, CURRENT REGULATOR DIODE, DO-213AB
CURRENT REGULATOR DIODES 1.4 mA, SILICON, CURRENT REGULATOR DIODE, DO-213AB
CURRENT REGULATOR DIODES 0.91 mA, SILICON, CURRENT REGULATOR DIODE, DO-213AB
CURRENT REGULATOR DIODES 0.39 mA, SILICON, CURRENT REGULATOR DIODE, DO-213AB
CURRENT REGULATOR DIODES 0.3 mA, SILICON, CURRENT REGULATOR DIODE, DO-213AB
Pulse-Width-Modulation (Pwm) Control Circuit 16-SOIC 0 to 70
CURRENT REGULATOR DIODES
|
MICROSEMI[Microsemi Corporation]
Microsemi, Corp.
MICROSEMI CORP-LAWRENCE
|
| LY3 LY4N LY1 LY2 LY4S LY1-0 LY1-CR LY1-D LY1F LY1L |
General Purpose Relay
Metal Oxide Resistor; Series:MP800; Resistance:0.020ohm; Resistance Tolerance: /- 5 %; Power Rating:20W; Temperature Coefficient:0 to 300 ppm/ C; Terminal Type:Radial Leaded; Package/Case:2-TO-220; Voltage Rating:300V 通用继电
Triac; Thyristor Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:800V; On State RMS Current, IT(rms):40A; Gate Trigger Current (QI), Igt:50mA; Current, It av:40A; Forward Current:40A; Gate Trigger Current Max, Igt:50mA RoHS Compliant: Yes 通用继电
Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVS06; Number of Contacts:10; Connector Shell Size:13; Connecting Termination:Crimp; Circular Shell Style:Straight Plug; Body Style:Straight 通用继电
General Purpose Relay 通用继电
RES 1206 475R 0.125W 1% 200V 100PPM/C
Triac; Thyristor Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:400V; On-State RMS Current, IT(rms):40A; Gate Trigger Current (QI), Igt:50mA; Current, It av:40A; Forward Current:40A; Gate Trigger Current Max, Igt:50mA RoHS Compliant: Yes
Triac; Thyristor Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:400V; On State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:25mA; Current, It av:6A; Gate Trigger Current Max, Igt:25mA RoHS Compliant: Yes
Power Thick Film Resistor; Series:MK; Resistance:2Mohm; Resistance Tolerance: 1%; Power Rating:0.75W; Operating Temperature Range:-55 C to C
|
International Rectifier, Corp.
Omron Electronics, LLC
OMRON[Omron Electronics LLC]
http://
|
| 2SK1297 |
V(dss): 60V; I(d): 40A; 100W; silicon N-channel MOS FET. For high speed power switching
|
Hitachi Semiconductor
|
| BC636 BC640 BC638 Q68000-A3367 Q68000-A3366 Q68000 |
PNP Silicon AF Transistors (High current gain High collector current) 自动对焦进步党硅晶体管（高电流增益高集电极电流）
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| BCP49 Q62702-C2137 BCP29 Q62702-C2136 |
From old datasheet system
NPN Silicon Darlington Transistors (For general AF applications High collector current High current gain)
|
SIEMENS[Siemens Semiconductor Group]
|
| BC516 Q62702-C944 |
PNP Silicon Darlington Transistor (High current gain High collector current)
From old datasheet system
|
Siemens Semiconductor G...
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| BDP954 Q62702-D1340 BDP952 BDP956 Q62702-D1344 Q62 |
PNP Silicon AF Power Transistor (For AF drivers and output stages High collector current High current gain)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| ZHCS500 UZHCS500 ZHCS500TA |
DIODE SCHOTTKY SOT-23
SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE “SuperBAT?/a>
SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE “SuperBAT”
SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE SuperBAT
SOT23 SILICON HIGH CURRENT
0.5 A, SILICON, SIGNAL DIODE
High Current Schottky Diode
|
ZETEX[Zetex Semiconductors]
Diodes Incorporated
|
| BC638ZL1 BC636-16ZL1 BC640 BC640ZL1 BC636 BC636-16 |
Transistor Silicon Plastic PNP
High Current Transistors PNP Silicon
High Current Transistors(PNP Silicon)
High Current Transistors 500 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
|
ONSEMI[ON Semiconductor]
|
| 2N6702 2N6703 2N6704 |
High-current silicon N-P-N VERSAWATT transistor.
High-Current silicon NPN Versawatt Transistors
|
General Electric Solid State
ETC
List of Unclassifed Manufacturers
|
