PART |
Description |
Maker |
GTVA220701FA |
Thermally-Enhanced High Power RF GaN HEMT
|
Infineon Technologies A...
|
PXFC192207FH |
Thermally-Enhanced High Power RF LDMOS FET
|
Infineon Technologies A...
|
PXAC182908FV PXAC182908FV-15 |
Thermally-Enhanced High Power RF LDMOS FET
|
Infineon Technologies A...
|
PTFA091201E PTFA091201EV4R0 PTFA091201EV4R250 PTFA |
Thermally-Enhanced High Power RF LDMOS FETs
|
Infineon Technologies A...
|
PTVA030121EA |
Thermally-Enhanced High Power RF LDMOS FET 12 W, 50 V, 390 ?450 MHz
|
Cree, Inc
|
PTFA070601E PTFA070601F |
Thermally-Enhanced High Power RF LDMOS FETs 60 W, 725 鈥?770 MHz
|
Infineon Technologies AG
|
PTFA192001F PTFA192001E |
Thermally-Enhanced High Power RF LDMOS FETs 200 W, 1930-1990 MHz
|
Infineon Technologies AG
|
PTFB211501E PTFB211501F |
Thermally-Enhanced High Power RF LDMOS FETs 150 W, 2110 鈥?2170 MHz
|
Infineon Technologies AG
|
PTFC261402FC |
Thermally-Enhanced High Power RF LDMOS FET 140 W, 28 V, 2620 ?2690 MHz
|
Cree, Inc
|
PTFA092201E PTFA092201F |
Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 - 960 MHz
|
Infineon Technologies AG
|
PTVA084007NF |
Thermally-Enhanced High Power RF LDMOS FET 370 W, 48 V, 755 ?805 MHz
|
Cree, Inc
|
PTF081301E PTF081301F |
Thermally-Enhanced High Power RF LDMOS FETs 130 W, 869 - 960 MHz
|
Infineon Technologies AG
|