| PART |
Description |
Maker |
| SKA06N60 |
Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode( NPT 技术中的快S-IGBT)
|
SIEMENS AG
|
| SGB15N120 |
Fast S-IGBT in NPT-technology( NPT技术中的快S-IGBT) 快速的S -不扩散核武器条约IGBT的技术（不扩散技术中的快速第S - IGBT的）
|
SIEMENS AG
|
| SIGC07T60SNC |
IGBT Chip in NPT-technology 600V NPT technology positive temperature coefficient
|
Infineon Technologies AG
|
| K25N120 |
Fast IGBT in NPT-technology
|
Infineon Technologies
|
| SKW30N6008 |
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
|
Infineon Technologies AG
|
| SKB02N6007 |
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
|
Infineon Technologies AG
|
| SKW25N120 |
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
|
INFINEON[Infineon Technologies AG]
|
| SKP06N6007 SKA06N60 |
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
|
Infineon Technologies AG
Infineon Technologies A...
|
| SKB10N60A SKP10N60A SKW10N60A |
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
Fast IGBT in NPT-technology with soft fast recovery anti-parallel EmCon diode
|
INFINEON[Infineon Technologies AG]
|
| SGP02N60 SGP02N6007 SGD02N60 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| SGB07N120 SGB07N12007 |
Fast IGBT in NPT-technology lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| SGP10N60A SGW10N60A SGP10N60A09 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
