| PART |
Description |
Maker |
| MS1329 |
RF & MICROWAVE TRANSISTORS VHF FM APPLICATIONS
VHF 100-175 MHz, Class C, Common Emitter; P(out) (W): 60; P(in) (W): 12; Gain (dB): 7; Vcc (V): 28; Cob (pF): 80; Case Style: M135 VHF BAND, Si, NPN, RF POWER TRANSISTOR
|
Advanced Power Technolo...
Microsemi, Corp.
|
| MS1506 |
VHF 100-175 MHz, Class C, Common Emitter; P(out) (W): 40; P(in) (W): 5; Gain (dB): 9; Vcc (V): 13.6; Cob (pF): 95; fO (MHz): 0; Case Style: M135 VHF BAND, Si, NPN, RF POWER TRANSISTOR
RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS
|
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
| YL1150 YLII50 |
V.H.F BEAM POWER TETRODE
|
List of Unclassifed Manufacturers
ETC
|
| C1112 |
BEAM POWER TETRODE
BEAM POWER TETRODE
|
Electronic Theatre Controls, Inc.
ETC[ETC]
|
| 4-125A1 4D21 |
RADIAL-BEAM POWER TETRODE. MODULATOR OSCILLATOR AMPLIFIER
|
List of Unclassifed Manufacturers
|
| BLF573S BLF573 |
HF / VHF power LDMOS transistor
A 300 W LDMOS RF power transistor for broadcast applications and industrial, scientific and medical applications in the HF to 500 MHz band.
HF - VHF power LDMOS transistor
|
NXP Semiconductors N.V.
|
| BLY89 BLY89C |
VHF power transistor VHF BAND, Si, NPN, RF POWER TRANSISTOR
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| QLB5/3500 |
Tetrode
|
Philips
|
| TBB1016 TBB1016RMTL-E |
Twin Built in Biasing Circuit MOS FET IC VHF/VHF RF Amplifier
|
Renesas Electronics Corporation
|
| TBB1010 |
Twin Build in Biasing Circuit MOS FET IC VHF/VHF RF Amplifier
|
Renesas Electronics Corporation
|
| BF1012S |
Silicon N-Channel MOSFET Tetrode
|
Infineon
|
