| PART |
Description |
Maker |
| ZXMC3F31DN8TA ZXMC3F31DN8 |
30V SO8 COMPLEMENTART DUAL ENHANCEMENT MODE
30V SO8 Complementary dual enhancement mode
|
Diodes Incorporated
|
| CFD2059R CFD2059O |
30.000W Power NPN Plastic Leaded Transistor. 100V Vceo, 5.000A Ic, 40 - 80 hFE. Complementary CFB1367R
30.000W Power NPN Plastic Leaded Transistor. 100V Vceo, 5.000A Ic, 40 - 240 hFE. Complementary CFB1367
30.000W Power NPN Plastic Leaded Transistor. 100V Vceo, 5.000A Ic, 70 - 140 hFE. Complementary CFB1367O
|
Continental Device India Limited
|
| ZXMP3F37D ZXMP3F37DN8 ZXMP3F37DN8TA |
30V SO8 Dual P-channel enhancement mode MOSFET
|
Zetex Semiconductors
|
| ZXMN6A11DN8_06 ZXMN6A11DN8 ZXMN6A11DN8TA |
60V SO8 Dual N-channel enhancement mode MOSFET
|
ZETEX[Zetex Semiconductors]
|
| ZXMN6A11DN8 ZXMN6A11DN8TA ZXMN6A11DN806 |
60V SO8 Dual N-channel enhancement mode MOSFET
|
Zetex Semiconductors
Diodes Incorporated
|
| ZXMN3F318DN8 |
30V SO8 Asymmetrical dual N-channel enhancement mode MOSFET
|
Diodes
|
| ZDT6753TA ZDT6753-15 ZDT6753TC |
100V COMPLEMENTARY MEDIUM POWER TRANSISTOR IN SM-8
|
Diodes Incorporated
|
| NTMD6601NR2G NTMD6601N |
80V 2.2A DUAL N-CHANNEL SO8
NFET S08D 80V
Power MOSFET 80 V, 2.2 A, Dual N-Channel, SO-8
|
ON Semiconductor
|
| IRHG563110 IRHG567110 IRHG563110P IRHG567110P IRHG |
-100V 100kRad Hi-Rel Dual 2N and 2P -Channel TID Hardened MOSFET in a MO-036AB package
100V Dual 2N- and 2P- Channel MOSFET in a MO-036AB package
-100V 300kRad Hi-Rel Dual 2N and 2P -Channel TID Hardened MOSFET in a MO-036AB package
RADIATION HARDENED POWER MOSFET THRU-HOLE 100V, Combination 2N-2P-CHANNEL
|
IRF[International Rectifier]
|
| MJD112-001 MJD112RL MJD112T4 MJD112T4G MJD117 MJD1 |
Power 2A 100V Darlington NPN
Power 2A 100V Darlington PNP
Complementary Darlington Power Transistors
|
ONSEMI[ON Semiconductor]
|
| IRHG6110 IRHG63110 IRHG6110P IRHG6110N IRHG6110PBF |
Simple Drive Requirements
100V Dual 2N- and 2P- Channel MOSFET in a MO-036AB package
-100V 100kRad Hi-Rel Dual 2N and 2P -Channel TID Hardened MOSFET in a MO-036AB package
RADIATION HARDENED POWER MOSFET
100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET MOSFET TECHNOLOGY
1 A, 100 V, 0.7 ohm, 4 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, MO-036AB
|
IRF[International Rectifier]
|
| 935163290112 PCF1252-0T/F4112 PCF1252-0TD-T PCF125 |
1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO8
Threshold detector and reset generator; Package: SOT96-1 (SO8); Container: Tube
Threshold detector and reset generator; Package: SOT96-1 (SO8); Container: Tape reel smd
|
NXP SEMICONDUCTORS
|
