| PART |
Description |
Maker |
| IXTQ18N60P IXTV18N60P |
MOSFET N-CH 600V 18A TO-3P 18 A, 600 V, 0.42 ohm, N-CHANNEL, Si, POWER, MOSFET
PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated
|
IXYS, Corp.
IXYS Corporation
|
| 18N60 18N60G-T47-T 18N60L-T47-T 18N60-11 |
18A,600V N-CHANNEL POWER MOSFET
18A,600V N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
| R6004KNX |
Nch 600V 4A Power MOSFET
|
Rohm
|
| R6035KNZC8 |
Nch 600V 35A Power MOSFET
|
ROHM
|
| R6046FNZ1 |
Nch 600V 46A Power MOSFET
|
Rohm
|
| IRG4BC30S-S IRG4BC30SS IRG4BC30S-STRL IRG4BC30S-ST |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 18A I(C) | TO-263AB 晶体管| IGBT的|正陈| 600V的五（巴西）国际消费电子展| 18A条一（c）|63AB
INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=18A) 绝缘栅双极晶体管IGBT的标准速度（VCES和\u003d 600V电压的Vce（on）典\u003d.4V，@和VGE \u003d 15V的，集成电路\u003d 18A条）
INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V Vce(on)typ.=1.4V @Vge=15V Ic=18A)
600V DC-1 kHz (Standard) Discrete IGBT in a D2-Pak package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| FS4UM-12 FS1KM-16A FS20UM-6 |
Power MOSFETs: FS Series, Medium Voltage, 600V
Nch POWER MOSFET HIGH-SPEED SWITCHING USE
|
Mitsubishi Electric Corporation
POWEREX[Powerex Power Semiconductors]
|
| IRF9Z34L IRF9Z34S IRF9Z34STRL IRF9Z34STRR |
-60V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss=-60V/ Rds(on)=0.14ohm/ Id=-18A)
Power MOSFET(Vdss=-60V, Rds(on)=0.14ohm, Id=-18A)
|
IRF[International Rectifier]
|
| STSJ80N4LLF3 |
N-channel 40V - 0.0042Ω - 18A - PowerSO-8 STripFET?III Power MOSFET for DC-DC conversion
N-channel 40V - 0.0042ヘ - 18A - PowerSO-8⑩ STripFET⑩III Power MOSFET for DC-DC conversion
|
STMicroelectronics
|
| APT6035SVR APT10088HVR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 600V 18A 0.350 Ohm
|
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
|
| STF20NF20 STP20NF20 STD20NF20 |
N-channel 200V - 0.10-18A- DPAK/TO-220/TO-220FP Low gate charge STripFETPower MOSFET N沟道200 0.10 18A条，DPAK/TO-220/TO-220FP低栅极电荷STripFET⑩功率MOSFET
N-channel 200V - 0.10ヘ -18A- DPAK/TO-220/TO-220FP Low gate charge STripFET⑩ Power MOSFET
N-channel 200V - 0.10Ω -18A- DPAK/TO-220/TO-220FP Low gate charge STripFET Power MOSFET
N-channel 200V - 0.10Ω -18A- DPAK/TO-220/TO-220FP Low gate charge STripFET?/a> Power MOSFET
|
STMicroelectronics N.V.
|
| IRF640L IRF640S |
Power MOSFET(Vdss=200V/ Rds(on)=0.18ohm/ Id=18A)
Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=18A)
HEXFET? Power MOSFET
|
IRF[International Rectifier]
|
