| PART |
Description |
Maker |
| 2ED300C17-ST |
Dual IGBT Driver Board For Infineon Medium and High Power IGBT Modules
|
Infineon Technologies AG
|
| CM50TU-24H09 |
IGBT MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
|
| CM15MD-12H |
MITSUBISHI IGBT MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
| CM50DU-24H |
IGBT Modules:1200V
MEDIUM POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| RM20C1A-XXS RM20DA/CA/C1A-XXS RM20CA-XXS RM20DA-XX |
FAST RECOVERY DIODE MODULES MEDIUM POWER, HIGH FREQUENCY USE INSULATED TYPE
Fast Recovery Diode Modules, F Series (for IGBT speed switching)
MEDIUM POWER/ HIGH FREQUENCY USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
| CM15MD3-12H |
MITSUBISHI IGBT MODULES MEDIUM POWER SWITCHING USE FLAT-BASE TYPE, INSULATED TYPE
|
Mitsubishi Electric Corporation
|
| VUB145 VUB145-16NO1 VUB116 VUB116-16NO1 |
Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System 95 A, 1200 V, N-CHANNEL IGBT
Power Modules/Rectifier Bridge Modules: Three Phase Bridges with Dynamic Brake IGBT
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| VII100-06P1 VIO100-06P1 VDI100-06P1 VID100-06P1 IX |
IGBT Modules: Boost Configurated IGBT Modules
2-WIRE FIELD PROGRAMMABLE W/TIN PLATING
|
IXYS[IXYS Corporation]
|
| RM60SZ-6S RM60SZ-6S/-6R RM60SZ-6R |
DIODE MODULES MEDIUM POWER GENERAL USE NON-INSULATED TYPE
Fast Recovery Diode Modules, F Series (for welding)
|
Mitsubishi Electric Corporation
|
| FS15R12VT3 |
IGBT-modules
IGBT Modules up to 1200V SixPACK; Package: AG-EASY750-1; IC (max): 15.0 A; VCE(sat) (typ): 1.7 V; Configuration: SixPACK; Technology: IGBT3; Housing: EasyPACK 750;
|
eupec GmbH
Infineon Technologies
|
| VUB72 VUB72-12NO1 VUB72-16NO1 |
50 A, 1200 V, N-CHANNEL IGBT
Three Phase Rectifier Bridge With Brake Chopper
Power Modules/Rectifier Bridge Modules: Three Phase Bridges with Dynamic Brake IGBT
|
IXYS Corporation
|
