| PART |
Description |
Maker |
| ZXTN4006Z ZXTN4006ZTA ZXTN4006Z-15 |
200V NPN LED DRIVING TRANSISTOR IN SOT89
|
Diodes Incorporated
|
| 2SD1616A 2SD1616 D1616 2SD1616AU 2SD1616-L |
1000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
NPN SILICON TRANSISTORS NPN硅三极管
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 1A I(C) | TO-92
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| 154-22 153-28 154-18 154-04 154-10 154-14 154-12 1 |
TRANSISTOR | BJT | NPN | 220V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 180V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 140V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 260V V(BR)CEO | 7.5A I(C)
TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 7.5A I(C)
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 240V V(BR)CEO | 7.5A I(C)
TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 7.5A I(C) | STR-1/4 晶体管|晶体管|叩| 40V的五（巴西）总裁| 7.5AI（丙）|个STR - 1 / 4
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 7.5A I(C) | STR-1/4 晶体管|晶体管|叩| 60V的五（巴西）总裁| 7.5AI（丙）|个STR - 1 / 4
TRANSISTOR | BJT | NPN | 280V V(BR)CEO | 7.5A I(C) 晶体管|晶体管| npn型| 280伏特五（巴西）总裁| 7.5AI（丙
|
NXP Semiconductors N.V.
Bel Fuse, Inc.
YEONHO Electronics Co., Ltd.
|
| 2SC3746 2SA1469 2SA1469S 2SA1469Q 2SC3746R |
60V/5A High-Speed Switching Applications
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 5A I(C) | TO-220VAR
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 5A I(C) | SOT-186 晶体管|晶体管|叩| 60V的五（巴西）总裁| 5A条一（c）|的SOT - 186
|
Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
|
| 2SA1289 2SC3253 2SC3253S 2SC3253R 2SA1289R |
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 5A I(C) | TO-220AB
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 5A I(C) | TO-220AB
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
60V/5A High-Speed Switching Applications
|
ETC
SANYO[Sanyo Semicon Device]
|
| DXT2010P5 DXT2010P5-13 DXT2010P5-15 |
60V NPN MEDIUM POWER TRANSISTOR PowerDI垄莽5
60V NPN MEDIUM POWER TRANSISTOR PowerDI?5
|
Diodes Incorporated
|
| 2SD2394E 2SD2318F5E |
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-220VAR
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-252
|
|
| 2SD1779 2SD1779L |
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 2A I(C) | TO-260VAR 晶体管|晶体管|叩| 60V的五（巴西）总裁|甲一（c）|60VAR
NPN SILICON TRANSISTOR
|
NEC, Corp.
NEC[NEC]
|
| BDY23B |
Bipolar NPN Device in a Hermetically sealed TO3
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 6A I(C) | TO-3
|
Seme LAB
|
| ECG130MP ECG152 ECG153 ECG155 ECG153MP ECG159MCP E |
Finger guards Round type - suction side - Adaptation machine-Frame size : 200mm; Surface Finishing: Cation electropainting; Adaptation Machine: San Ace 200(suction side);
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 7A I(C) | TO-220
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 3A I(C) | TO-3VAR
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 7A I(C) | TO-220AB
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 1A I(C) | TO-92 晶体管|晶体管|进步党| 80V的五（巴西）总裁| 1A条一（c）|2
TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 1A I(C) | TO-1 晶体管|晶体管|进步党| 32V的五（巴西）总裁| 1A条一（c）|
|
TE Connectivity, Ltd.
Aeroflex, Inc.
|
