PART |
Description |
Maker |
MAGX-001214-500L00-V2 |
GaN on SiC HEMT Pulsed Power Transistor
|
M/A-COM Technology Solu...
|
MAGX-000035-015000-V1 MAGX-000035-015000-15 |
GaN on SiC HEMT Pulsed Power Transistor
|
M/A-COM Technology Solutions, Inc. M/A-COM Technology Solution... M/A-COM Technology Solu...
|
RFHA1023 |
225W GaN WIDE-BAND PULSED POWER AMPLIFIER
|
RF Micro Devices
|
ECE-V1HA101UP EEV-TG2A101M ERJ-8GEYJ100V GRM32NR72 |
120W GaN WIDEBAND POWER AMPLIFIER
|
RF Micro Devices
|
MAGX-001214-SB0PPR MAGX-001214-125L00 MAGX-001214- |
GaN on SiC HEMT Pulsed Power Transistor 125W Peak, 1200-1400 MHz, 300μs Pulse, 10% Duty
|
M/A-COM Technology Solutions, Inc. M/A-COM Technology Solu...
|
MAGX-000912-250L00 MAGX-000912-SB1PPR |
GaN on SiC HEMT Pulsed Power Transistor 250W Peak, 960-1215 MHz, 128μs Pulse, 10% Duty
|
M/A-COM Technology Solutions, Inc.
|
GRM21BF51C106ZE15L GRM188R71H103KA01D 100A0R8BW150 |
30MHz TO 512MHz, 9W GaN WIDEBAND
|
RF Micro Devices
|
NPT2022 NPT2022-14 |
GaN Wideband Transistor 48 V, 100 W
|
M/A-COM Technology Solu...
|
EFRP-S2287HPM |
1U 280W Redundant Network Power
|
List of Unclassifed Man...
|
MPE-825A |
280W AC-DC ATX Power Supply
|
BOSER Technology Co., Ltd
|
PHI214-0851 PH1214-0.85L |
Radar Pulsed Power Transistor, 0.85W, 2ms Pulse, 20% Duty 1.2 - 1.4 GHz 1200-1400 MHz,0.85 W, 2 ms pulse,radar pulsed power transistor
|
Tyco Electronics MA-Com
|
NJM12904 NJM12904D NJM12904E NJM12904L NJM12904M N |
Radar Pulsed Power Amplifier.190 Watts 2.7.3.1 GHz / 200s Pulse / 10 Duty Radar Pulsed Power Amplifier-190 Watts 2.7-3.1GHz,200ms Pulse,10% Duty Radar Pulsed Power Amplifier.190 Watts 2.7.3.1 GHz, 200s Pulse, 10 Duty Radar Pulsed Power Amplifier.190 Watts 2.7.3.1 GHz, 200レs Pulse, 10 Duty 雷达脉冲功率Amplifier.190.7.3.1千兆赫,200レ拧脉冲10职务
|
MA-Com MACOM[Tyco Electronics] Analog Devices, Inc.
|