| PART |
Description |
Maker |
| STW5NA100 5367 STH5NA100FI STH5NA100 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN
N - CHANNEL ENHANCEMENT MODE, POWER MOS TRANSISTORS
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
From old datasheet system
N-Channel Enhancement Mode Power MOS Transistors(N沟道增强模式快速功率MOS晶体 N沟道增强模式功率MOS晶体管（不适用沟道增强模式快速功率马鞍山晶体管）
|
ST Microelectronics
SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
STMicroelectronics N.V.
|
| TZ404CY TZ404 TZ404BD |
20 V, 8 ohm, N-channel enhancement-mode D-MOS FET
N-CHANNEL ENHANCEMENT-MODE D-MOS FET ULTRA HIGH-SPEED LOW-COST SWITCH
|
Topaz Semiconductor
ETC[ETC]
List of Unclassifed Manufacturers
|
| STH7NA100FI STW7NA100FI STW7NA100 5759 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN
From old datasheet system
N-CHANNEL MOSFET
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
N-Channel Enhancement Mode Power MOS Transistors(N沟道增强模式功率MOS晶体 N沟道增强模式功率MOS晶体管（不适用沟道增强模式功率马鞍山晶体管
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
TE Connectivity, Ltd.
|
| APT1001RBLC APT1001RSLC APT1001 |
POWER MOS VI 1000V 11A 1.000 Ohm
Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No
Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
|
| HCT7000MTXV HCT7000 HCT7000M HCT7000MTX |
N- Channel En hance ment Mode MOS Transistor
N- Channel Enhancement Mode MOS Transis tor
|
List of Unclassifed Manufacturers
ETC[ETC]
OPTEK Technologies
|
| STP33N10FI STP33N10 3141 |
N-Channel Enhancement Mode Power MOS Transistor(N娌??澧?己妯″????MOSFET)
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
From old datasheet system
|
STMICROELECTRONICS[STMicroelectronics]
|
| STW80N06-10 4868 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN
N - CHANNEL ENHANCEMENT MODE "ULTRA HIGH DENSITY" POWER MOS TRANSISTOR
From old datasheet system
N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| APT10045B2FLL APT10045LFLL |
MGrid IDT Rec W/SglLRmp .76AuLF 10Ckt
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
POWER MOS 7 1000V 23A 0.450 Ohm
|
Advanced Power Technology Ltd.
|
| APT6017B2FLL APT6017LFLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. 电源MOS 7TM是一个低损耗，高电压，N沟道增强型功率MOSFET的新一代
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
POWER MOS 7 600V 35A 0.017 Ohm
|
Advanced Power Technology, Ltd.
|
| APT6013B2FLL APT6013LFLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. 电源MOS 7TM是一个低损耗，高电压，N沟道增强型功率MOSFET的新一代
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
POWER MOS 7 600V 43A 0.130 Ohm
|
Advanced Power Technology, Ltd.
|
| PHP206 |
Dual P-channel enhancement mode MOS transistor 5600 mA, 30 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| SGSP477 |
N-Channel Enhancement Mode Power MOS Transistor
N-CHANNEL ELHANCEMENT MODE POWER MOS TRANSISTOR N沟道ELHANCEMENT电源MOS晶体
|
ST Microelectronics
STMicroelectronics
意法半导
|
