PART |
Description |
Maker |
NAND128W3A2BN6 NAND01BGR3A NAND01BGR3A0AN1T NAND01 |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
|
STMICROELECTRONICS[STMicroelectronics]
|
SST25WF512 SST25WF010 SST25WF020 |
512 Kbit / 1 Mbit / 2 Mbit 1.8V SPI Serial Flash
|
SST[Silicon Storage Technology, Inc]
|
SST27SF010-70-3C-NHE SST27SF010-70-3C-PHE SST27SF0 |
512 Kbit / 1 Mbit / 2 Mbit (x8) Many-Time Programmable Flash
|
SST[Silicon Storage Technology, Inc]
|
M58PR512LE M58PR512LE96ZB5 M58PR256LE96ZB5 M58PR00 |
256-Mbit, 512-Mbit or 1-Gbit (】 16, multiple bank, multilevel, burst) 1.8 V supply Flash memories
|
STMicroelectronics
|
M48Z512A10 M48Z512A-85PM6 M48Z512A-85PM1 M48Z512AY |
4 Mbit (512 Kbit x 8) ZEROPOWER庐 SRAM 4 Mbit (512 Kbit x 8) ZEROPOWER? SRAM
|
STMicroelectronics http://
|
NAND01G-A NAND128-A NAND256-A NAND01GR3A0AN1 NAND0 |
128 Mbit / 256 Mbit / 512 Mbit / 1 Gbit (x8/x16) 528 Byte/264 Word Page / 1.8V/3V / NAND Flash Memories 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
|
STMicroelectronics ST Microelectronics
|
M29W800FB9D11 M29W800FB-KGD |
Known good die, 8-Mbit (1 Mbit x 8 or 512 Kbits x 16), boot block, 3 V supply Flash memory
|
Numonyx B.V http://
|
M36P0R9070E0_06 M36P0R9070E0 M36P0R9070E0ZAC M36P0 |
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package
|
STMICROELECTRONICS[STMicroelectronics]
|
HYB18T512800B2FL-3S HYB18T512400B2F-3.7 |
512-Mbit Double-Data-Rate-Two SDRAM 64M X 8 DDR DRAM, 0.45 ns, PBGA60 512-Mbit Double-Data-Rate-Two SDRAM 128M X 4 DDR DRAM, 0.5 ns, PBGA60
|
Qimonda AG
|
CY7C1381D-133AXI CY7C1381D-100AXC CY7C1381D-100BZI |
18 Mbit (512 K ? 36/1 M ? 18) Flow Through SRAM 18 Mbit (512 K × 36/1 M × 18) Flow Through SRAM
|
Cypress Semiconductor
|