PART |
Description |
Maker |
R2486-04 R2486 R2486-01 R2486-02 R2486-03 |
POSITION-SENSITIVE PHOTOMULTIPLIER TUBES WITH CROSSED WIRE ANODES 位置灵敏光电倍增管带交叉钢丝阳极
|
Hamamatsu Photonics K.K. HAMAMATSU[Hamamatsu Corporation]
|
2SK508G-X-AE3-R 2SK508L-X-AE3-R |
HIGH FREQUENCY AMPLIFIER N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR
|
Unisonic Technologies
|
NJ3600L |
Silicon Junction Field-Effect Transistor Large Capacitance Detector Pre-Amplifier
|
INTERFET[InterFET Corporation]
|
2SK302 |
Field Effect Transistor Silicon N Channel MOS Type FM Tuner, VHF RF Amplifier Applications
|
TOSHIBA
|
2SK2467 |
FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE HIGH POWER AMPLIFIER APPLICATION
|
TOSHIBA
|
2SK370 |
Field Effect Transistor Silicon N Channel Junction Type For Low Noise Audio Amplifier Applications
|
TOSHIBA
|
2SJ108 |
Field Effect Transistor Silicon P Channel Junction Type Low Noise Audio Amplifier Applications
|
TOSHIBA
|
2SJ313 |
Field Effect Transistor Silicon P Channel MOS Type Audio Frequency Power Amplifier Application
|
TOSHIBA
|
2SK3079 |
FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 900 MHz BAND AMPLIFIER APPLICATIONS (GSM)
|
TOSHIBA
|
2SK2145 |
Field Effect Transistor Silicon N Channel Junction Type Audio Frequency Low Noise Amplifier Applications
|
TOSHIBA
|