| PART |
Description |
Maker |
| RJK6014DPP-E0 |
600V - 16A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK60S4DPE-00-J3 |
600V - 16A - SJ MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK6026DPP-E0 |
600V - 5A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK6024DPE RJK6024DPE-15 |
600V - 0.4A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK6002DPE RJK6002DPE-00J3 |
600V - 2A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK60S7DPP-E0 RJK60S7DPP-E0-T2 |
600V -30A - SJ MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| 2SK1959 2SK1959-T1 |
N Channel enhancement MOS FET
MOS Field Effect Transistor
N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING
|
NEC[NEC]
|
| RJL6015DPK-15 |
600V - 19A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJL60S5DPE |
600V - 20A - SJ MOS FET
|
Renesas Technology
|
| STW16NA40 STW16NA40FI STH16NA40 STH16NA40FI W16NA4 |
N-Channel 400V-0.21Ω-16A - TO-247/ISOWATT218 Power MOS Transistors(Ｎ沟道功率ＭＯＳ晶体 N沟道400V -0.21Ω- 16A TO-247/ISOWATT218功率MOS晶体管（不适用马鞍山沟道功率晶体管
N - CHANNEL 400V - 0.21W - 16A - TO-247/ISOWATT218 POWER MOS TRANSISTORS
From old datasheet system
N - CHANNEL 400V - 0.21ohm - 16A - TO-247/ISOWATT218 POWER MOS TRANSISTORS
|
STMicroelectronics N.V.
意法半导
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
|
| 2SK2132 2SK2132-T |
High-voltage power MOS FET 180V/4A
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
|
NEC[NEC]
|
| APT12080LVR |
POWER MOS V 1200V 16A 0.800 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
