PART |
Description |
Maker |
PTFA041501GL PTFA041501HL |
Thermally-Enhanced High Power RF LDMOS FETs 150 W, 420 ??500 MHz Thermally-Enhanced High Power RF LDMOS FETs 150 W, 420 ?500 MHz UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
|
Infineon Technologies AG
|
GTVA261701FA-15 |
Thermally-Enhanced High Power RF GaN HEMT
|
Infineon Technologies A...
|
PTVA127002EV-15 |
Thermally-Enhanced High Power RF LDMOS FET
|
Infineon Technologies A...
|
PXAC180602MD-15 |
Thermally-Enhanced High Power RF LDMOS FET
|
Infineon Technologies A...
|
PXAC182002FC PXAC182002FC-15 |
Thermally-Enhanced High Power RF LDMOS FET
|
Infineon Technologies A...
|
PTFB090901FA PTFB090901EA |
Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 . 960 MHz
|
Infineon Technologies AG
|
PTFA210301E |
Thermally-Enhanced High Power RF LDMOS FET 30 W, 2110-2170 MHz
|
Infineon Technologies AG
|
PTFA210701E PTFA210701F |
Thermally-Enhanced High Power RF LDMOS FET 70 W, 2110 鈥?2170 MHz
|
Infineon Technologies AG
|
PTFA210601E PTFA210601F |
Thermally-Enhanced High Power RF LDMOS FETs 60 W, 2110 鈥?2170 MHz
|
Infineon Technologies AG
|
PTFB211501E PTFB211501F |
Thermally-Enhanced High Power RF LDMOS FETs 150 W, 2110 鈥?2170 MHz
|
Infineon Technologies AG
|
PTFC261402FC |
Thermally-Enhanced High Power RF LDMOS FET 140 W, 28 V, 2620 ?2690 MHz
|
Cree, Inc
|