PART |
Description |
Maker |
MAGX-000035-045000-V1 |
GaN on SiC HEMT Pulsed Power Transistor
|
M/A-COM Technology Solution...
|
MAGX-003135-SB3PPR MAGX-003135-180L00 |
GaN HEMT Pulsed Power Transistor 3.1 - 3.5 GHz, 180W Peak, 300us Pulse, 10% Duty
|
M/A-COM Technology Solutions, Inc.
|
CGH40006P-AMP |
6 W, RF Power GaN HEMT
|
Cree, Inc
|
CGH40025F |
25 W, RF Power GaN HEMT
|
CREE[Cree, Inc]
|
CLF1G0035-100P CLF1G0035S-100P |
Broadband RF power GaN HEMT
|
NXP Semiconductors
|
TGI0910-50 |
MICROWAVE POWER GaN HEMT
|
Toshiba Semiconductor
|
GTVA220701FA |
Thermally-Enhanced High Power RF GaN HEMT
|
Infineon Technologies A...
|
TGF2023-20 |
100 Watt Discrete Power GaN on SiC HEMT
|
TriQuint Semiconductor
|
MAGX-000035-030000 MAGX-000035-SB1PPR MAGX-000035- |
GaN HEMT Power Transistor 30W CW, 30 MHz - 3.5 GHz
|
M/A-COM Technology Solutions, Inc. M/A-COM Technology Solution... M/A-COM Technology Solu...
|
ATC100A0R7BT ATC100A0R2BT ATC100A120JT ATC100A220J |
280W GaN WIDEBAND PULSED POWER
|
RF Micro Devices
|