| PART |
Description |
Maker |
| HMC816LP4E |
SMT GaAs PHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 230 - 660 MHz
|
Hittite Microwave Corporation
|
| HMC816LP4E10 |
SMT GaAs pHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 230 - 660 MHz
|
Hittite Microwave Corporation
Hittite Microwave Corpo...
|
| HMC618ALP3E |
GaAs SMT pHEMT LOW NOISE AMPLIFIER
|
Analog Devices
|
| HMC565LC509 |
GaAs SMT PHEMT LOW NOISE AMPLIFIER, 6 - 20 GHz
|
Hittite Microwave Corporation
|
| HMC564LC4 |
GaAs SMT PHEMT LOW NOISE AMPLIFIER, 7 - 14 GHz
|
Hittite Microwave Corporation
|
| SFH420 SFH425 Q62702-P0330 Q62702-P1690 |
Mica Film Capacitor; Capacitance:33pF; Capacitance Tolerance: /- 5 %; Working Voltage, DC:300V
GaAs-IR-Lumineszenzdiode 0.5 in SMT-Gehuse GaAs Infrared Emitter in SMT Package
GaAs-IR-Lumineszenzdiode in SMT-Gehause GaAs Infrared Emitter in SMT Package
From old datasheet system
|
Siemens Semiconductor G...
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| MRFG35010MT1 |
MRFG35010MT1 3.5 GHz, 9 W, 12 V Power FET GaAs PHEMT
Gallium Arsenide PHEMT
|
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
|
| AS222-92 |
AS222-92:PHEMT GaAs IC SPDT Switch 0.1 GHz|DC-6 GHz Plastic Packaged and Chip|SPST AS222 - 92：PHEMT的砷化镓集成电路单刀双掷开.1-3千兆赫|直流- 6 GHz的塑料包装和芯片|聚苯乙烯
PHEMT GaAs IC SPDT Switch 0.1 - 3 GHz
|
SKYWORKS[Skyworks Solutions Inc.]
|
| AS185-92 |
ECONOLINE: REC3-S_DRW(Z)/H* - 3W DIP Package- 1kVDC Isolation- Wide Input 2:1 & 4:1- Regulated Output- 100% Burned In- UL94V-0 Package Material- Continuous Short Circiut Protection- Efficiency to 80%
PHEMT GaAs IC High Linearity Positive Control SPDT Switch DC-2 GHz
PHEMT GaAs IC High Linearity Positive Control SPDT Switch DC GHz
|
Alpha Industries, Inc.
Alpha Industries Inc
|
| HMC102212 |
GaAs pHEMT MMIC
|
Hittite Microwave Corporation
|
| AS178-73 |
PHEMT GaAs IC High Linearity Positive Control SPDT Switch DC-2 GHz PHEMT的砷化镓集成电路积极控制高线性单刀双掷开关的DC - 2吉赫
PHEMT GaAs IC High Linearity Positive Control SPDT Switch DC? GHz
|
Alpha Industries, Inc.
ALPHA[Alpha Industries]
Alpha Industries Inc
|
