PART |
Description |
Maker |
150KR60 150KSR10 150KSR40 150KSR30 150KR20 150KR30 |
Diode Switching 600V 150A 2-Pin DO-8 Diode Switching 100V 150A 2-Pin Case B-42 Diode Switching 400V 150A 2-Pin Case B-42 Diode Switching 300V 150A 2-Pin Case B-42 Diode Switching 200V 150A 2-Pin DO-8 Diode Switching 300V 150A 2-Pin DO-8
|
New Jersey Semiconductor
|
BYW52-TR BYW54-TR BYW54-TAP |
DIODE 2 A, 200 V, SILICON, RECTIFIER DIODE, ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2, Rectifier Diode AVALANCHE DIODE SOD57 STD-E2 Diode Switching 600V 2A 2-Pin SOD-57 Ammo
|
Vishay Semiconductors
|
1N445 1N316 1N440 1N547 1N535 1N539 1N536 1N533 1N |
GOLD BONDED GERMANIUM DIODES Diode Zener Single 8.4V 5% 500mW 2-Pin DO-7 Diode Zener Single 68V 5% 1.5W 2-Pin DO-41 Diode Switching 400V 3A 2-Pin SOD-64 Ammo Diode Zener Single 87V 5W 2-Pin DO-201AE Diode Switching 75V 0.25A Automotive 2-Pin SOD-323 T/R
|
New Jersey Semiconductor
|
SMBD914 MMBD914 |
0.25 A, 100 V, SILICON, SIGNAL DIODE Silicon Switching Diode For high-speed switching applications Qualified according AEC Q101
|
Infineon Technologies AG
|
CPD41 |
Switching Diode High Current Switching Diode Chip
|
Central Semiconductor Corp
|
BAS521LP-7B BAS521LP-7 |
Discrete - Diodes (Less than 0.5A) - Switching Diodes 0.4 A, 325 V, SILICON, SIGNAL DIODE HIGH VOLTAGE SWITCHING DIODE
|
Diodes Incorporated
|
1N3062 1N3064 1N3063 1N3062-15 |
SILICON SWITCHING DIODE 0.075 A, 75 V, SILICON, SIGNAL DIODE, DO-35 Leaded Silicon Diode Switching
|
Central Semiconductor, Corp. CENTRAL[Central Semiconductor Corp] Central Semiconductor C...
|
BAS16 Q62702-F739 |
Silicon Switching Diode (For high-speed switching) 0.25 A, SILICON, SIGNAL DIODE
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
40HF 40HF160 40HF80 42HF160M 41HF160 |
STANDARD RECOVERY DIODES Diode Switching 1.6KV 40A 2-Pin DO-5 Diode Switching 800V 40A 2-Pin DO-5
|
New Jersey Semi-Conductor Products, Inc. New Jersey Semiconductors New Jersey Semi-Conductor P... New Jersey Semi-Conduct...
|
CMDD7006 |
SMD Switching Diode Single: High Voltage SURFACE MOUNT VERY HIGH VOLTAGE SILICON SWITCHING DIODE
|
CENTRAL[Central Semiconductor Corp]
|
1N4150-1 JANTXV1N4150-1 |
Signal or Computer Diode; Package: DO-35; IO (A): 0.2; Cj (pF): 2.5; Vrwm (V): 50; trr (nsec): 4; VF (V): 0.74; IR (µA): 0.1; 0.2 A, 50 V, SILICON, SIGNAL DIODE, DO-35 SWITCHING DIODE
|
Microsemi, Corp. MICROSEMI[Microsemi Corporation]
|
CMUDW6001 |
SURFACE MOUNT ULTRA LOW LEAKAGE SILICON SWITCHING DIODE 75V, 250mA Ultra Low Leakage Switching Diode in the SOT-523W package
|
Central Semiconductor Corp
|