PART |
Description |
Maker |
K9F1208Q0A-XXB0 K9F1208Q0B K9F1208Q0A-DIB0 K9F1208 |
64M x 8 bit NAND flash memory, 2.7 - 3.6V 512Mb/256Mb 1.8V NAND Flash Errata 64M x 8 bit NAND flash memory, 1.70 - 1.95V 32M x 16 bit NAND flash memory, 2.7 - 3.6V 32M x 16 bit NAND flash memory, 1.70 - 1.95V
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Samsung Electronic SAMSUNG[Samsung semiconductor]
|
KM29W040AT KM29W040AIT |
V(cc): 2.7 -3.6V; 512M x 8 bits NAND flash memory 512K x 8 bit NAND Flash Memory
|
Samsung semiconductor Samsung Electronic
|
K9F1G08Q0M-PCB0 K9F1G08Q0M-PIB0 K9F1G08Q0M-YCB0 K9 |
128M x 8 Bit / 64M x 16 Bit NAND Flash Memory 1Gb Gb 1.8V NAND Flash Errata
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
HY27LF081G2M-TCP HY27LF081G2M-TCS HY27LF161G2M-TCB |
Inductor; Inductor Type:Power; Inductance:2uH; Inductance Tolerance: 25 %; Series:CTX; Package/Case:PCB Surface Mount; Core Material:Amorphous Metal; Current, lt rms Parallel:7.26A; Current, lt rms Series:3.63A RoHS Compliant: Yes 3.3V Differential Transceiver 8-PDIP -40 to 85 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory 1Gbit的(128Mx8bit / 64Mx16bit)NAND闪存 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory 128M X 8 FLASH 1.8V PROM, 30 ns, PDSO48 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory 64M X 16 FLASH 1.8V PROM, 30 ns, PDSO48 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory 64M X 16 FLASH 3.3V PROM, 30 ns, PDSO48 CONNECTOR ACCESSORY 128M X 8 FLASH 3.3V PROM, 30 ns, PDSO48 CONNECTOR ACCESSORY 64M X 16 FLASH 1.8V PROM, 30 ns, PDSO48 Power Heater Soldering Tip; Tip/Nozzle Style:Chisel; Tip/Nozzle Thickness:0.2"; Tip/Nozzle Size:0.40 1Gbit的(128Mx8bit / 64Mx16bit)NAND闪存 COILTRONICS RoHS Compliant: Yes 1Gbit的(128Mx8bit / 64Mx16bit)NAND闪存 Power Heater Soldering Tip; Tip/Nozzle Style:Chisel; Tip/Nozzle Thickness:0.1"; Tip/Nozzle Size:0.43 RoHS Compliant: Yes 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
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Hynix Semiconductor Inc. Hynix Semiconductor, Inc.
|
K9F1208B0B K9F1208R0B K9F1208U0B |
64M x 8 Bit NAND Flash Memory
|
SAMSUNG[Samsung semiconductor]
|
DSK9F1208U0M K9F1208U0 K9F1208U0M- K9F1208U0M-YCB0 |
64M x 8 Bit NAND Flash Memory
|
SAMSUNG[Samsung semiconductor] Samsung Electronic
|
K5P6480YCM-T085 |
64M Bit (8Mx8) Nand Flash Memory / Data Sheet
|
Samsung Electronic
|
K9K1G16U0A |
128M x 8 Bit / 64M x 16 Bit NAND Flash Memory 128M的8 64米16位NAND闪存
|
Samsung Semiconductor Co., Ltd.
|
K9K1G08U0A K9K1G08U0A1 K9K1G16U0A K9K1G08Q0A K9K1G |
128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
K9F6408U0A-TCB0 K9F6408U0A-TIB0 |
From old datasheet system EEPROM,NAND FLASH,8MX8,CMOS,TSOP,44PIN,PLASTIC 8M x 8 Bit NAND Flash Memory
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SAMSUNG[Samsung semiconductor] Samsung Electronics Inc
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