PART |
Description |
Maker |
W9825G2JB |
2M ?4 BANKS ?32BITS SDRAM
|
Winbond
|
W9825G2JB |
2M X 4 BANKS X 32BITS SDRAM
|
Winbond
|
W9864G2IB |
512K X 4 BANKS X 32BITS SDRAM
|
Winbond
|
W9864G2IB |
512K × 4 BANKS × 32BITS SDRAM
|
Winbond
|
W981616AH W981616AHB1 |
512 x 2 Banks x 16 Bits SDRAM 512K x 2 BANKS x 16 BIT SDRAM From old datasheet system
|
Winbond Electronics
|
HY5V66GF HY5V66GF-H HY5V66GF-P |
SDRAM - 64Mb 4 Banks x 1M x 16Bit Synchronous DRAM 4Mx16|3.3V|4K|H|SDR SDRAM - 64M x16 SDRAM x16内存
|
Hynix Semiconductor TT electronics Semelab, Ltd.
|
K4S643232H-TC70 K4S643232H-TL70 K4S643232H-TC_L50 |
64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 183MHz 64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 166MHz 64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 200MHz 64Mb H-die (x32) SDRAM Specification
|
Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD.
|
W986432AH-55 WINBONDELECTRONICSCORP-W986432AH-6 |
512K x 4 BANKS x 32 BITS SDRAM x32 SDRAM 2M X 32 SYNCHRONOUS DRAM, 5 ns, PDSO86
|
Winbond Electronics Corp Winbond Electronics, Corp.
|
W986432AH W986432AHA1 |
512K x 4 BANKS x 32 BITS SDRAM 512K x 4 BANKS x 32 BITS SDRAM From old datasheet system
|
Winbond Electronics WINBOND[Winbond]
|
MT46H16M16LFBF-6ITH MT46H8M32LGB5-75ITA |
Mobile DDR SDRAM MT46H16M16LF ?4 Meg x 16 x 4 banks MT46H8M32LF/LG ?2 Meg x 32 x 4 banks 8M X 32 DDR DRAM, 6 ns, PBGA90
|
Micron Technology
|
K4S640832 K4S640832F K4S640832F-TL75 K4S640832F-TC |
Advanced LinCMOS(TM) Low-Noise Precision Operational Amplifier 8-SOIC 0 to 70 64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL IC,SDRAM,4X2MX8,CMOS,TSOP,54PIN,PLASTIC
|
SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Electronics Inc
|
50S116T 50S116T-5 50S116T-6 50S116T-7 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 143MHz. Self refresh current (max) 1mA High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 166MHz. Self refresh current (max) 1mA High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 200MHz. Self refresh current (max) 1mA SDRAM(512K X 2 BANKS X 16 BITS SDRAM)
|
CERAMATE TECHNOLOGY CO., LTD.
|